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VS-GT100TS065N PDF预览

VS-GT100TS065N

更新时间: 2024-11-01 14:55:43
品牌 Logo 应用领域
威世 - VISHAY 双极性晶体管
页数 文件大小 规格书
9页 171K
描述
“Half Bridge” High Speed IGBT INT-A-PAK, 100 A

VS-GT100TS065N 数据手册

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VS-GT100TS065N  
Vishay Semiconductors  
www.vishay.com  
“Half Bridge” High Speed IGBT INT-A-PAK, 100 A  
FEATURES  
• Trench IGBT technology  
• Gen 4 FRED Pt® technology anti-parallel diodes  
with ultra soft reverse recovery characteristics  
• Very low switching losses  
• Al2O3 DBC  
• UL approved file E78996  
• Designed for industrial level  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
INT-A-PAK IGBT  
BENEFITS  
PRIMARY CHARACTERISTICS  
• Optimized for high current inverter stages  
• Direct mounting to heatsink  
• Very low junction to case thermal resistance  
• Low EMI  
VCES  
650 V  
72 A  
I
C DC, TC = 80 °C  
V
CE(on) at 100 A, 25 °C  
1.82 V  
Chip level VCE(on) at 100 A, 25 °C  
Speed  
1.70 V  
8 kHz to 30 kHz  
INT-A-PAK  
Half bridge  
Package  
Circuit configuration  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
650  
UNITS  
Collector to emitter voltage  
VCES  
V
TC = 25 °C  
C = 80 °C  
96  
Continuous collector current  
IC  
T
72  
Pulsed collector current  
Peak switching current  
ICM  
ILM  
TC = 175 °C, tp = 6 ms, VGE = 15 V  
240  
140  
A
TC = 25 °C  
57  
Diode continuous forward current  
IF  
T
C = 80 °C  
43  
Maximum non-repetitive peak current  
Gate to emitter voltage  
IFSM  
VGE  
10 ms sine or 6 ms rectangular pulse, TJ = 25 °C  
270  
20  
V
RMS isolation voltage  
VISOL  
Any terminal to case, t = 1 min  
TC = 25 °C  
2500  
259  
Maximum power dissipation  
PD  
PD  
W
W
°C  
TC = 80 °C  
164  
TC = 25 °C  
150  
Maximum power dissipation (Diode)  
TC = 80 °C  
95  
Operating junction temperature range  
Storage temperature range  
TJ  
-40 to +175  
-40 to +150  
TStg  
Revision: 28-Jul-2023  
Document Number: 97007  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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