Datasheet > VS-GT400LH060N

VS-GT400LH060N

更新时间： 2024-09-14 14:53:19

品牌	Logo	应用领域
威世 - VISHAY		双极性晶体管
页数	文件大小	规格书
11页	193K
描述
Low Side Chopper 600 V, 400 A, DIAP IGBT Power Module (Trench Field Stop IGBT)

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VS-GT400LH060N 数据手册

VS-GT400LH060N

Vishay Semiconductors

www.vishay.com

Low Side Chopper 600 V, 400 A,

DIAP IGBT Power Module (Trench Field Stop IGBT)

FEATURES

• Trench Field Stop IGBT technology

• 6 μs short circuit capability

• Low V_CE(on)

• Square RBSOA

• FRED Pt^®antiparallel diode with ultrasoft reverse recovery

characteristics

Dual INT-A-PAK

• Industry standard package

• Al₂O₃DBC

PRIMARY CHARACTERISTICS

IGBT Q1

• UL pending

V_CES

600 V

375 A

1.67 V

• Designed for industrial level

I_CDC at 80 °C

V_CE(on)(typical) at 400 A, 25 °C

CHOPPER DIODE D2

V_RRM

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

600 V

278 A

1.61 V

141 ns

BENEFITS

I_FDC at 80 °C

• Increased operating efficiency

• Direct mounting on heatsink

• Very low junction to case thermal resistance

V_FM(typical) at 400 A, 25 °C

t_rrat 400 A, 25 °C

ANTIPARALLEL DIODE D1

V_RRM

600 V

142 A

I_FDC at 80 °C

V_FM(typical) at 200 A, 25 °C

t_rrat 200 A, 25 °C

Package

1.56 V

120 ns

Dual INT-A-PAK

Low side chopper

Circuit

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

UNITS

IGBT Q1

Collector to emitter voltage

V_CES

600

492

375

850

693

T_C= 25 °C

T_C= 80 °C

T_p= 6 ms, square pulse

(1)

Continuous collector current

I_C

Pulsed collector current

Clamped inductive load current

Gate to emitter voltage

I_CM

I_LM

V_GE

T_C= 25 °C

T_C= 80 °C

1363

864

Maximum power dissipation

DIODE D2

P_D

T_C= 25 °C

T_C= 80 °C

374

278

1415

652

Chopper diode continuous forward current

Single pulse forward current

Maximum power dissipation

DIODE D1

I_F

I_FSM

P_D

10 ms sine or 6 ms rectangular pulse, T_J= 25 °C

T_C= 25 °C

T_C= 80 °C

413

T_C= 25 °C

T_C= 80 °C

192

142

725

312

198

Antiparallel diode continuous forward current

Single pulse forward current

Maximum power dissipation

I_F

I_FSM

P_D

10 ms sine or 6 ms rectangular pulse, T_J= 25 °C

T_C= 25 °C

T_C= 80 °C

RMS isolation voltage

Storage temperature range

Operating junction temperature range

V_ISOL

T_STG

T_J

Any terminal to case (V_RMSt = 1 s, T_J= 25 °C)

3500

-40 to 150

-40 to +175

°C

Note

(1)

Maximum continuous collector current must be limited to 500 A to do not exceed the maximum temperature of terminals

Revision: 21-Mar-2023

Document Number: 96988

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与VS-GT400LH060N相关器件

型号	品牌	获取价格	描述	数据表
VS-GT400TD60S	VISHAY	获取价格	Dual INT-A-PAK Low Profile "Half Bridge" (Standard Speed IGBT), 400 A
VS-GT50LA65UF	VISHAY	获取价格	“Low Side Chopper” IGBT SOT-227, 650 V, 50 A
VS-GT50TP120N	VISHAY	获取价格	Molding Type Module IGBT, 2 in 1 Package, 1200 V, 50 A
VS-GT50YF120NT	VISHAY	获取价格	IGBT Fourpack Module, 50 A
VS-GT55LA120UX	VISHAY	获取价格	“Low Side Chopper” IGBT SOT-227 (Trench IGBT)
VS-GT55NA120UX	VISHAY	获取价格	“High Side Chopper” IGBT SOT-227 (Trench IGBT
VS-GT75LA60UF	VISHAY	获取价格	“Low Side Chopper” IGBT SOT-227, 70 A
VS-GT75NA60UF	VISHAY	获取价格	“High Side Chopper” IGBT SOT-227, 70 A
VS-GT75NP120N	VISHAY	获取价格	Molding Type Module IGBT, Chopper in 1 Package, 1200 V, 75 A
VS-GT75YF120NT	VISHAY	获取价格	IGBT 4 Pack Module, 75 A

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