Datasheet > VS-GT180DA120U

VS-GT180DA120U

更新时间： 2024-09-14 14:54:31

品牌	Logo	应用领域
威世 - VISHAY		栅双极性晶体管
页数	文件大小	规格书
10页	181K
描述
Insulated Gate Bipolar Transistor (Trench IGBT), 180 A

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

VS-GT180DA120U 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.72
Base Number Matches：	1

VS-GT180DA120U 数据手册

VS-GT180DA120U

Vishay Semiconductors

www.vishay.com

Insulated Gate Bipolar Transistor

(Trench IGBT), 180 A

FEATURES

• 1200 V trench and field stop technology

• Low switching losses

• Positive temperature coefficient

• Easy paralleling

• Square RBSOA

• 10 μs short circuit capability

• HEXFRED^®antiparallel diodes with ultrasoft reverse

recovery

SOT-227

• T_Jmaximum = 150 °C

• Fully isolated package

• Very low internal inductance ( 5 nH typical)

• Industry standard outline

• UL approved file E78996

PRIMARY CHARACTERISTICS

V_CES

1200 V

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

I_C(DC)

_CE(on)typical at 100 A, 25 °C

I_F(DC)

185 A at 90 °C

1.55 V

32 A at 90 °C

BENEFITS

Speed

8 kHz to 30 kHz

SOT-227

• Designed for increased operating efficiency in power

conversion: UPS, SMPS, welding, induction heating

Package

• Easy to assemble and parallel

• Direct mounting to heatsink

Circuit configuration

Single switch with AP diode

• Plug-in compatible with other SOT-227 packages

• Very low V_CE(on)

• Low EMI, requires less snubbing

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

1200

281

185

390

450

UNITS

Collector to emitter voltage

V_CES

T_C= 25 °C

T_C= 90 °C

Continuous collector current

I_C

Pulsed collector current

Clamped inductive load current

Gate to emitter voltage

I_CM

I_LM

V_GE

T_C= 25 °C

Diode continuous forward current

Single pulse forward current

Power dissipation, IGBT

I_F

_C= 90 °C

I_FSM

P_D

10 ms sine or 6 ms rectangular pulse, T_J= 25 °C

185

1087

522

216

103

2500

T_C= 25 °C

T_C= 90 °C

T_C= 25 °C

Power dissipation, diode

Isolation voltage

P_D

_C= 90 °C

V_ISOL

Any terminal to case, t = 1 min

Revision: 10-Sep-2019

Document Number: 96044

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...10

中文翻译

下载PDF

与VS-GT180DA120U相关器件

型号	品牌	获取价格	描述	数据表
VS-GT200TS065N	VISHAY	获取价格	“Half Bridge” High Speed IGBT INT-A-PAK, 200
VS-GT200TS065S	VISHAY	获取价格	“Half Bridge” Low VCE(on) IGBT INT-A-PAK, 200
VS-GT250SA60S	VISHAY	获取价格	Insulated Gate Bipolar Transistor Ultralow VCE(on), 250 A
VS-GT300TD60S	VISHAY	获取价格	Dual INT-A-PAK Low Profile "Half Bridge" (Standard Speed IGBT), 300 A
VS-GT300YH120N	VISHAY	获取价格	DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology
VS-GT400LH060N	VISHAY	获取价格	Low Side Chopper 600 V, 400 A, DIAP IGBT Power Module (Trench Field Stop IGBT)
VS-GT400TD60S	VISHAY	获取价格	Dual INT-A-PAK Low Profile "Half Bridge" (Standard Speed IGBT), 400 A
VS-GT50LA65UF	VISHAY	获取价格	“Low Side Chopper” IGBT SOT-227, 650 V, 50 A
VS-GT50TP120N	VISHAY	获取价格	Molding Type Module IGBT, 2 in 1 Package, 1200 V, 50 A
VS-GT50YF120NT	VISHAY	获取价格	IGBT Fourpack Module, 50 A

与VS-GT180DA120U相关文章

SL74HC10N：高性能三输入与非门解析
2024-09-03

78
AIC1781A 电池充电控制器深度解析
2024-09-03

69
Pickering新高压舌簧继电器亮相汽车测试博览会
2024-08-26

100
采用MCU+MPU双处理器架构实现的创新应用设计探索
2024-08-23

114

产品中心

服务支持

精选活动

关于我们

帮助中心

VS-GT180DA120U

VS-GT180DA120U 技术参数

VS-GT180DA120U 数据手册

与VS-GT180DA120U相关器件

与VS-GT180DA120U相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

VS-GT180DA120U

VS-GT180DA120U 技术参数

VS-GT180DA120U 数据手册

与VS-GT180DA120U相关器件

与VS-GT180DA120U相关文章

您还可以找

您在本页遇到什么问题？