Datasheet > VS-GT300TD60S

VS-GT300TD60S

更新时间： 2024-09-14 14:55:35

品牌	Logo	应用领域
威世 - VISHAY		双极性晶体管
页数	文件大小	规格书
9页	170K
描述
Dual INT-A-PAK Low Profile "Half Bridge" (Standard Speed IGBT), 300 A

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

VS-GT300TD60S 数据手册

VS-GT300TD60S

Vishay Semiconductors

www.vishay.com

Dual INT-A-PAK Low Profile “Half Bridge”

(Standard Speed IGBT), 300 A

FEATURES

• TrenchStop IGBT technology

• Standard: optimized for hard switching speed

• Low V_CE(on)

• Square RBSOA

• Gen 4 FRED Pt^®dices technology

• Industry standard package

• Al₂O₃DBC

• UL approved file E78996

• Designed for industrial level

Dual INT-A-PAK Low Proﬁle

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

BENEFITS

V_CES

600 V

300 A

• Increased operating efficiency

I_CDC at T_C= 100 °C

_CE(on)(typical) at 300 A, 25 °C

Speed

1.15 V

• Performance optimized as output inverter stage for TIG

welding machines

DC to 1 kHz

Dual INT-A-PAK low profile

Half bridge

Package

• Direct mounting on heatsink

Circuit configuration

• Very low junction to case thermal resistance

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

600

466

349

1500

700

260

192

UNITS

Collector to emitter voltage

V_CES

T_C= 25 °C

_C= 80 °C

(1)

Continuous collector current

I_C

Pulsed collector current

I_CM

I_LM

T_C= 175 °C, t_p= 6 ms, V_GE= 15 V

Clamped inductive load current

T_C= 25 °C

Diode continuous forward current

Gate to emitter voltage

I_F

_C= 80 °C

V_GE

P_D

T_C= 25 °C

T_C= 80 °C

T_C= 25 °C

T_C= 80 °C

882

559

441

279

Maximum power dissipation (IGBT)

Maximum power dissipation (diode)

RMS isolation voltage

P_D

Any terminal to case

(V_RMSt = 1 s, T_J= 25 °C)

V_ISOL

3500

Note

(1)

Maximum continuous collector current must be limited to 500 A to do not exceed the maximum temperature of terminals

Revision: 20-Jul-2021

Document Number: 96723

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

中文翻译

下载PDF

与VS-GT300TD60S相关器件

型号	品牌	获取价格	描述	数据表
VS-GT300YH120N	VISHAY	获取价格	DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology
VS-GT400LH060N	VISHAY	获取价格	Low Side Chopper 600 V, 400 A, DIAP IGBT Power Module (Trench Field Stop IGBT)
VS-GT400TD60S	VISHAY	获取价格	Dual INT-A-PAK Low Profile "Half Bridge" (Standard Speed IGBT), 400 A
VS-GT50LA65UF	VISHAY	获取价格	“Low Side Chopper” IGBT SOT-227, 650 V, 50 A
VS-GT50TP120N	VISHAY	获取价格	Molding Type Module IGBT, 2 in 1 Package, 1200 V, 50 A
VS-GT50YF120NT	VISHAY	获取价格	IGBT Fourpack Module, 50 A
VS-GT55LA120UX	VISHAY	获取价格	“Low Side Chopper” IGBT SOT-227 (Trench IGBT)
VS-GT55NA120UX	VISHAY	获取价格	“High Side Chopper” IGBT SOT-227 (Trench IGBT
VS-GT75LA60UF	VISHAY	获取价格	“Low Side Chopper” IGBT SOT-227, 70 A
VS-GT75NA60UF	VISHAY	获取价格	“High Side Chopper” IGBT SOT-227, 70 A