Datasheet > VS-GT50LA65UF

VS-GT50LA65UF

更新时间： 2024-09-14 14:54:43

品牌	Logo	应用领域
威世 - VISHAY		双极性晶体管
页数	文件大小	规格书
10页	209K
描述
“Low Side Chopper” IGBT SOT-227, 650 V, 50 A

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VS-GT50LA65UF 数据手册

VS-GT50LA65UF

Vishay Semiconductors

www.vishay.com

“Low Side Chopper” IGBT SOT-227, 650 V, 50 A

FEATURES

• Trench IGBT technology

• Higher switching frequency up to 150 kHz

• Square RBSOA

• Low V_CE(on)

• FRED Pt^®Gen 4 clamping diode

• Fully isolated package

SOT-227

• Very low internal inductance (≤ 5 nH typical)

• Industry standard outline

• UL approved file E78996

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

V_CES

650 V

BENEFITS

_CDC

50 A at 59 °C

1.70 V

• Designed for increased operating efficiency in power

conversion: UPS, SMPS, welding, induction heating

_CE(on)typical at 50 A, 25 °C

I_FDC

50 A at 25 °C

SOT-227

• Easy to assemble and parallel

Package

Circuit configuration

Low side chopper

• Direct mounting to heatsink

• Plug-in compatible with other SOT-227 packages

• Lower conduction losses and switching losses

• Low EMI, requires less snubbing

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

650

UNITS

Collector to emitter voltage

V_CES

T_C= 25 °C

_C= 80 °C

Continuous collector current

I_C

Pulsed collector current

I_CM

I_LM

V_GE= 15 V

135

125

Clamped inductive load current

T_C= 25 °C

Diode continuous forward current

I_F

T_C= 80 °C

Single pulse forward current

Gate to emitter voltage

I_FSM

V_GE

10 ms sine or 6 ms rectangular pulse, T_J= 25 °C

234

T_C= 25 °C

163

103

127

Power dissipation, IGBT

P_D

_C= 80 °C

T_C= 25 °C

_C= 80 °C

Power dissipation, diode

RMS isolation voltage

P_D

V_ISOL

Any terminal to case, t = 1 min

2500

Revision: 13-Sep-2022

Document Number: 96784

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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