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VS-GT90DA60U PDF预览

VS-GT90DA60U

更新时间: 2024-09-16 14:53:31
品牌 Logo 应用领域
威世 - VISHAY 双极性晶体管
页数 文件大小 规格书
10页 210K
描述
Insulated Gate Bipolar Transistor (High Speed Trench IGBT), 93 A

VS-GT90DA60U 数据手册

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VS-GT90DA60U  
Vishay Semiconductors  
www.vishay.com  
Insulated Gate Bipolar Transistor  
(High Speed Trench IGBT), 93 A  
FEATURES  
• Trench IGBT technology with positive  
temperature coefficient  
• Square RBSOA  
• HEXFRED® anti-parallel diodes with ultrasoft  
reverse recovery  
• Fully isolated package  
• Very low internal inductance (5 nH typical)  
• Industry standard outline  
SOT-227  
• UL approved file E78996  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
VCES  
600 V  
I
C DC  
90 A at 92 °C  
1.64 V  
BENEFITS  
V
CE(on) typical at 100 A, 25 °C  
• Designed for increased operating efficiency in power  
conversion: UPS, SMPS, welding, induction heating  
IF DC  
90 A at 103 °C  
8 kHz to 30 kHz  
SOT-227  
Speed  
• Easy to assemble and parallel  
Package  
• Direct mounting to heatsink  
Circuit configuration  
Single switch with AP diode  
• Plug-in compatible with other SOT-227 packages  
• Lower conduction losses and switching losses  
• Low EMI, requires less snubbing  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
600  
146  
92  
UNITS  
Collector to emitter voltage  
VCES  
V
TC = 25 °C  
C = 90 °C  
Continuous collector current  
IC  
T
Pulsed collector current  
ICM  
ILM  
TC = 150 °C, tp = 6 ms, VGE = 15 V  
300  
300  
100  
108  
20  
A
Clamped inductive load current  
TC = 25 °C  
Diode continuous forward current  
Gate-to-emitter voltage  
IF  
TC = 90 °C  
VGE  
PD  
V
W
V
TC = 25 °C  
C = 90 °C  
TC = 25 °C  
C = 90 °C  
446  
214  
379  
182  
2500  
Power dissipation, IGBT  
T
Power dissipation, diode  
Isolation voltage  
PD  
T
VISOL  
Any terminal to case, t = 1 min  
Revision: 20-Jul-2021  
Document Number: 96805  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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