Datasheet > VS-GT80DA120U

VS-GT80DA120U

更新时间： 2024-09-14 14:53:31

品牌	Logo	应用领域
威世 - VISHAY		栅双极性晶体管
页数	文件大小	规格书
10页	181K
描述
Insulated Gate Bipolar Transistor (Trench IGBT), 80 A

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VS-GT80DA120U 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.67
Base Number Matches：	1

VS-GT80DA120U 数据手册

VS-GT80DA120U

Vishay Semiconductors

www.vishay.com

Insulated Gate Bipolar Transistor

(Trench IGBT), 80 A

FEATURES

• Trench IGBT technology

• Positive V_CE(on)temperature coefficient

• Square RBSOA

• 10 μs short circuit capability

• HEXFRED^®low Q_rr, low switching energy

• T_Jmaximum = 150 °C

• Fully isolated package

SOT-227

• Very low internal inductance ( 5 nH typical)

• Industry standard outline

• UL approved file E78996

PRIMARY CHARACTERISTICS

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

V_CES

1200 V

I_CDC

_CE(on)typical at 80 A, 25 °C

Speed

80 A at 104 °C

2.0 V

BENEFITS

• Designed for increased operating efficiency in power

conversion: UPS, SMPS, welding, induction heating

8 kHz to 30 kHz

SOT-227

Package

• Easy to assemble and parallel

Circuit configuration

Single switch with AP diode

• Direct mounting to heatsink

• Plug-in compatible with other SOT-227 packages

• Low EMI, requires less snubbing

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

1200

139

UNITS

Collector to emitter voltage

V_CES

T_C= 25 °C

_C= 90 °C

Continuous collector current

I_C

Pulsed collector current

I_CM

I_LM

170

250

Clamped inductive load current

T_C= 25 °C

T_C= 90 °C

Diode continuous forward current

I_F

Single pulse forward current

Gate to emitter voltage

I_FSM

V_GE

10 ms sine or 6 ms rectangular pulse, T_J= 25 °C

350

T_C= 25 °C

T_C= 90 °C

T_C= 25 °C

658

316

403

194

2500

Power dissipation, IGBT

P_D

Power dissipation, diode

Isolation voltage

P_D

_C= 90 °C

V_ISOL

Any terminal to case, t = 1 min

Revision: 10-Sep-2019

Document Number: 96379

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...10

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与VS-GT80DA120U相关器件

型号	品牌	获取价格	描述	数据表
VS-GT80DA60U	VISHAY	获取价格	Insulated Gate Bipolar Transistor (Trench IGBT), 600 V, 600 A
VS-GT90DA120U	VISHAY	获取价格	Insulated Gate Bipolar Transistor (Ultrafast IGBT), 106 A
VS-GT90DA60U	VISHAY	获取价格	Insulated Gate Bipolar Transistor (High Speed Trench IGBT), 93 A
VS-GT90SA120U	VISHAY	获取价格	Insulated Gate Bipolar Transistor (Ultrafast IGBT), 106 A
VSH	VISHAY	获取价格	Bulk Metal® Foil Technology Low Profile Confo
VSH1126R00AB	VISHAY	获取价格	RES,RADIAL,METAL FOIL,126 OHMS,300WV,.05% +/-TOL,-2,2PPM TC,2309 CASE
VSH1126R00BB	VISHAY	获取价格	RES,RADIAL,METAL FOIL,126 OHMS,300WV,.1% +/-TOL,-2,2PPM TC,2309 CASE
VSH1126R00DB	VISHAY	获取价格	RES,RADIAL,METAL FOIL,126 OHMS,300WV,.5% +/-TOL,-2,2PPM TC,2309 CASE
VSH1126R00QB	VISHAY	获取价格	RES,RADIAL,METAL FOIL,126 OHMS,300WV,.02% +/-TOL,-2,2PPM TC,2309 CASE
VSH1164R00AB	VISHAY	获取价格	RES,RADIAL,METAL FOIL,164 OHMS,300WV,.05% +/-TOL,-2,2PPM TC,2309 CASE

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