Datasheet > VS-GT75YF120UT

VS-GT75YF120UT

更新时间： 2024-09-14 14:54:03

品牌	Logo	应用领域
威世 - VISHAY		双极性晶体管
页数	文件大小	规格书
10页	194K
描述
IGBT 4 Pack Module, 75 A

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数据手册

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VS-GT75YF120UT 数据手册

VS-GT75YF120UT

Vishay Semiconductors

www.vishay.com

IGBT 4 Pack Module, 75 A

FEATURES

• Trench gate field stop

• Square RBSOA

• HEXFRED^®low Q_rr, low switching energy

• Positive V_CE(on)temperature coefficient

• Copper baseplate

• Low stray inductance design

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

ECONO 2

(Package example)

BENEFITS

• Benchmark efficiency for SMPS appreciation in particular

HF welding

PRIMARY CHARACTERISTICS

V_CES

1200 V

75 A

• Rugged transient performance

_Cat T_C= 87 °C

• Low EMI, requires less snubbing

• Direct mounting to heatsink space saving

• PCB solderable terminals

_CE(on)(typical)

2.20 V

Speed

8 kHz to 30 kHz

ECONO 2

Package

• Low junction to case thermal resistance

Circuit configuration

4 pack with thermistor

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

UNITS

Collector to emitter voltage

V_CES

1200

T_C= 25 °C

_C= 80 °C

118

Continuous collector current

I_C

Pulsed collector current (See fig. C.T.5)

Clamped inductive load current

I_CM

I_LM

T_J= 150 °C, t_p= 6 ms, V_GE= 15 V

270

250

T_C= 25 °C

Diode continuous forward current

I_F

T_C= 80 °C

Diode maximum forward current

Gate to emitter voltage

I_FM

150

V_GE

431

T_C= 25 °C

T_C= 80 °C

Maximum power dissipation (IGBT)

Isolation voltage

P_D

241

V_ISOL

AC 2500 (min)

Revision: 26-Jul-2021

Document Number: 96842

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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