5秒后页面跳转
VS-GT75LA60UF PDF预览

VS-GT75LA60UF

更新时间: 2024-09-14 14:51:23
品牌 Logo 应用领域
威世 - VISHAY 双极性晶体管
页数 文件大小 规格书
9页 200K
描述
“Low Side Chopper” IGBT SOT-227, 70 A

VS-GT75LA60UF 数据手册

 浏览型号VS-GT75LA60UF的Datasheet PDF文件第2页浏览型号VS-GT75LA60UF的Datasheet PDF文件第3页浏览型号VS-GT75LA60UF的Datasheet PDF文件第4页浏览型号VS-GT75LA60UF的Datasheet PDF文件第5页浏览型号VS-GT75LA60UF的Datasheet PDF文件第6页浏览型号VS-GT75LA60UF的Datasheet PDF文件第7页 
VS-GT75LA60UF  
Vishay Semiconductors  
www.vishay.com  
“Low Side Chopper” IGBT SOT-227, 70 A  
FEATURES  
• Trench IGBT technology  
• Higher switching frequency up to 150 kHz  
• Square RBSOA  
• Low VCE(on)  
• FRED Pt® hyperfast rectifier  
• Fully isolated package  
SOT-227  
• Very low internal inductance (5 nH typical)  
• Industry standard outline  
• UL approved file E78996  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
VCES  
600 V  
BENEFITS  
I
C DC  
70 A at 57 °C  
1.79 V  
• Designed for increased operating efficiency in power  
conversion: UPS, SMPS, welding, induction heating  
V
CE(on) typical at 70 A, 25 °C  
IF DC  
70 A at 86 °C  
SOT-227  
• Easy to assemble and parallel  
Package  
Circuit configuration  
Low side chopper  
• Direct mounting to heatsink  
• Plug-in compatible with other SOT-227 packages  
• Lower conduction losses and switching losses  
• Low EMI, requires less snubbing  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
600  
81  
UNITS  
Collector to emitter voltage  
VCES  
V
TC = 25 °C  
C = 80 °C  
Continuous collector current  
IC  
T
61  
Pulsed collector current  
ICM  
ILM  
TC = 175 °C, tp = 6 ms, VGE = 15 V  
170  
250  
113  
75  
Clamped inductive load current  
A
TC = 25 °C  
Diode continuous forward current  
IF  
TC = 80 °C  
Single pulse forward current  
Gate to emitter voltage  
IFSM  
VGE  
10 ms sine or 6 ms rectangular pulse, TJ = 25 °C  
390  
20  
V
W
V
TC = 25 °C  
231  
146  
330  
179  
2500  
Power dissipation, IGBT  
PD  
T
C = 80 °C  
TC = 25 °C  
C = 80 °C  
Power dissipation, diode  
RMS isolation voltage  
PD  
T
VISOL  
Any terminal to case, t = 1 min  
Revision: 26-Jul-2021  
Document Number: 96736  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与VS-GT75LA60UF相关器件

型号 品牌 获取价格 描述 数据表
VS-GT75NA60UF VISHAY

获取价格

“High Side Chopper” IGBT SOT-227, 70 A
VS-GT75NP120N VISHAY

获取价格

Molding Type Module IGBT, Chopper in 1 Package, 1200 V, 75 A
VS-GT75YF120NT VISHAY

获取价格

IGBT 4 Pack Module, 75 A
VS-GT75YF120UT VISHAY

获取价格

IGBT 4 Pack Module, 75 A
VS-GT80DA120U VISHAY

获取价格

Insulated Gate Bipolar Transistor (Trench IGBT), 80 A
VS-GT80DA60U VISHAY

获取价格

Insulated Gate Bipolar Transistor (Trench IGBT), 600 V, 600 A
VS-GT90DA120U VISHAY

获取价格

Insulated Gate Bipolar Transistor (Ultrafast IGBT), 106 A
VS-GT90DA60U VISHAY

获取价格

Insulated Gate Bipolar Transistor (High Speed Trench IGBT), 93 A
VS-GT90SA120U VISHAY

获取价格

Insulated Gate Bipolar Transistor (Ultrafast IGBT), 106 A
VSH VISHAY

获取价格

Bulk Metal® Foil Technology Low Profile Confo