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VS-GT400TD60S PDF预览

VS-GT400TD60S

更新时间: 2024-11-02 14:54:47
品牌 Logo 应用领域
威世 - VISHAY 双极性晶体管
页数 文件大小 规格书
9页 189K
描述
Dual INT-A-PAK Low Profile "Half Bridge" (Standard Speed IGBT), 400 A

VS-GT400TD60S 数据手册

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VS-GT400TD60S  
Vishay Semiconductors  
www.vishay.com  
Dual INT-A-PAK Low Profile “Half Bridge”  
(Standard Speed IGBT), 400 A  
FEATURES  
• TrenchStop IGBT technology  
• Standard: optimized for hard switching speed  
• Low VCE(on)  
• Square RBSOA  
• Gen 4 FRED Pt® dices technology  
• Industry standard package  
• Al2O3 DBC  
• UL approved file E78996  
• Designed for industrial level  
Dual INT-A-PAK Low Profile  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
BENEFITS  
VCES  
600 V  
400 A  
• Increased operating efficiency  
IC DC at TC = 114 °C  
• Performance optimized as output inverter stage for TIG  
welding machines  
V
CE(on) (typical) at 400 A, 25 °C  
Speed  
1.14 V  
DC to 1 kHz  
Dual INT-A-PAK low profile  
Half bridge  
• Direct mounting on heatsink  
Package  
• Very low junction to case thermal resistance  
Circuit configuration  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
600  
711  
532  
1100  
900  
260  
192  
20  
UNITS  
Collector to emitter voltage  
VCES  
V
TC = 25 °C  
C = 80 °C  
(1)  
Continuous collector current  
IC  
T
Pulsed collector current  
ICM  
ILM  
TC = 175 °C, tp = 6 ms, VGE = 15 V  
A
Clamped inductive load current  
TC = 25 °C  
Diode continuous forward current  
Gate to emitter voltage  
IF  
T
C = 80 °C  
VGE  
PD  
V
TC = 25 °C  
TC = 80 °C  
TC = 25 °C  
TC = 80 °C  
1364  
864  
441  
279  
Maximum power dissipation (IGBT)  
W
Maximum power dissipation (Diode)  
RMS isolation voltage  
PD  
W
V
Any terminal to case  
(VRMS t = 1 s, TJ = 25 °C)  
VISOL  
3500  
Note  
(1)  
Maximum continuous collector current must be limited to 500 A to do not exceed the maximum temperature of terminals  
Revision: 12-Jul-2022  
Document Number: 96724  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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