VS-GT400TD60S
Vishay Semiconductors
www.vishay.com
Dual INT-A-PAK Low Profile “Half Bridge”
(Standard Speed IGBT), 400 A
FEATURES
• TrenchStop IGBT technology
• Standard: optimized for hard switching speed
• Low VCE(on)
• Square RBSOA
• Gen 4 FRED Pt® dices technology
• Industry standard package
• Al2O3 DBC
• UL approved file E78996
• Designed for industrial level
Dual INT-A-PAK Low Profile
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
BENEFITS
VCES
600 V
400 A
• Increased operating efficiency
IC DC at TC = 114 °C
• Performance optimized as output inverter stage for TIG
welding machines
V
CE(on) (typical) at 400 A, 25 °C
Speed
1.14 V
DC to 1 kHz
Dual INT-A-PAK low profile
Half bridge
• Direct mounting on heatsink
Package
• Very low junction to case thermal resistance
Circuit configuration
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
600
711
532
1100
900
260
192
20
UNITS
Collector to emitter voltage
VCES
V
TC = 25 °C
C = 80 °C
(1)
Continuous collector current
IC
T
Pulsed collector current
ICM
ILM
TC = 175 °C, tp = 6 ms, VGE = 15 V
A
Clamped inductive load current
TC = 25 °C
Diode continuous forward current
Gate to emitter voltage
IF
T
C = 80 °C
VGE
PD
V
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
1364
864
441
279
Maximum power dissipation (IGBT)
W
Maximum power dissipation (Diode)
RMS isolation voltage
PD
W
V
Any terminal to case
(VRMS t = 1 s, TJ = 25 °C)
VISOL
3500
Note
(1)
Maximum continuous collector current must be limited to 500 A to do not exceed the maximum temperature of terminals
Revision: 12-Jul-2022
Document Number: 96724
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000