Datasheet > VS-GT300YH120N

VS-GT300YH120N

更新时间： 2023-12-06 20:03:54

品牌	Logo	应用领域
威世 - VISHAY		双极性晶体管
页数	文件大小	规格书
10页	191K
描述
DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology

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VS-GT300YH120N 数据手册

VS-GT300YH120N

Vishay Semiconductors

www.vishay.com

DIAP Trench IGBT Power Module - 1200 V, 300 A

Current Fed Inverter Topology

FEATURES

• 1200 V IGBT trench and field stop technology

with positive temperature coefficient

• Low switching losses

• Maximum junction temperature 175 °C

• 10 μs short circuit capability

• Low inductance case

• HEXFRED^®antiparallel and series diodes with soft reverse

recovery

• Isolated copper baseplate using DCB (Direct Copper

Bonding) technology

PRIMARY CHARACTERISTICS

• Speed 4 kHz to 30 kHz

• Direct mounting to heatsink

IGBT

V_CES

1200 V

1.93 V

300 A

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

_CE(on)(typical) at 300 A, 25 °C

I_D(DC)at T_C= 80 °C

HEXFRED^®SERIES DIODE

BENEFITS

V_R

1200 V

1.99 V

300 A

• Short circuit ruggedness

V_F(typical) at 300 A, 25 °C

REMARKS

I_F(DC)at 80 °C

IGBT AND HEXFRED^®SERIES DIODE

• Product reliability results valid for T_J= 150 °C

• Recommended operation temperature T_op= 150 °C

V_CE(on)+ V_Ftypical at 300 A

3.92 V



HEXFRED^®ANTIPARALLEL DIODE

V_F(typical) at 10 A, 25 °C

1.6 V

40 A

I_F(DC)at 88 °C

Package

Dual INT-A-PAK

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

UNITS

IGBT

Collector to emitter voltage

V_CES

I_C

1200

300

400

720

700

T_C= 80 °C

Collector current

_C= 25 °C

Pulsed collector current

Clamped inductive load current

Gate to emitter voltage

I_CM

(1)

I_LM

V_GE

P_D

T_C= 80 °C

T_C= 25 °C

791

1250

Maximum power dissipation

SERIES DIODE

Cathode to anode breakdown voltage

V_RRM

I_F

I_FSM

P_D

1200

300

T_C= 80 °C

T_C= 25 °C

T_C= 80 °C

T_C= 25 °C

Continuous forward current

Peak repetitive forward current

Maximum power dissipation

412

2200

593

938

Revision: 20-Mar-2019

Document Number: 94681

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...10

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