Datasheet > VS-GT200TS065S

VS-GT200TS065S

更新时间： 2023-12-18 00:00:00

品牌	Logo	应用领域
威世 - VISHAY		双极性晶体管
页数	文件大小	规格书
9页	172K
描述
“Half Bridge” Low VCE(on) IGBT INT-A-PAK, 200 A

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VS-GT200TS065S 数据手册

VS-GT200TS065S

Vishay Semiconductors

www.vishay.com

“Half Bridge” Low V_CE(on)IGBT INT-A-PAK, 200 A

FEATURES

• Trench IGBT technology

• Gen 4 FRED Pt^®technology anti-parallel diodes

with ultra soft reverse recovery characteristics

• Very low conduction losses

• Al₂O₃DBC

• UL approved file E78996

• Designed for industrial level

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

INT-A-PAK IGBT

BENEFITS

• Optimized for high current inverter stages (AC TIG welding

machines)

PRIMARY CHARACTERISTICS

• Direct mounting to heatsink

• Very low junction to case thermal resistance

• Low EMI

V_CES

650 V

378 A

_CDC, T_C= 80 °C

_CE(on)at 200 A, 25 °C

1.09 V

Chip level V_CE(on)at 200 A, 25 °C

Speed

0.98 V

DC to 1 kHz

INT-A-PAK

Half bridge

Package

Circuit configuration

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

650

UNITS

Collector to emitter voltage

V_CES

T_C= 25 °C

_C= 80 °C

476

Continuous collector current

Pulsed collector current

I_C

I_CM

I_F

378

T_C= 175 °C, t_p= 6 ms, V_GE= 15 V

T_C= 25 °C

810

Diode continuous forward current

_C= 80 °C

Maximum non-repetitive peak current

Peak switching current

I_FSM

I_LM

10 ms sine or 6 ms rectangular pulse

270

320

Gate to emitter voltage

V_GE

RMS isolation voltage

V_ISOL

Any terminal to case, t = 1 min

T_C= 25 °C

2500

1000

633

Maximum power dissipation

P_D

_C= 80 °C

°C

T_C= 25 °C

150

Maximum power dissipation (Diode)

_C= 80 °C

Operating junction temperature range

Storage temperature range

T_J

-40 to +175

-40 to +150

T_Stg

Revision: 28-Jul-2023

Document Number: 97091

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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