Datasheet > VS-GT100YG120UT

VS-GT100YG120UT

更新时间： 2024-11-02 14:55:11

品牌	Logo	应用领域
威世 - VISHAY		双极性晶体管
页数	文件大小	规格书
9页	374K
描述
IGBT ECONO 3 Module, 100 A

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数据手册

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VS-GT100YG120UT 数据手册

VS-GT100YG120UT

Vishay Semiconductors

www.vishay.com

IGBT ECONO 3 Module, 100 A

FEATURES

• Trench gate field stop IGBT

• 5 μs short circuit capability

• Square RBSOA

• HEXFRED low Q_rr, low switching energy

• Positive V_CE(on)temperature coefficient

• Copper baseplate

• Low stray inductance design

• UL approved file E78996

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

ECONO 3, 4 pack

BENEFITS

• Benchmark efficiency for SMPS appreciation in particular

HF welding

PRIMARY CHARACTERISTICS

V_CES

• Rugged transient performance

1200 V

100 A

• Low EMI, requires less snubbing

• Direct mounting to heatsink space saving

• PCB solderable terminals

I_C(DC)at T_C= 93 °C

V_CE(on)typ. at 100 A

2.12 V

Package

ECONO 3

• Low junction to case thermal resistance

Circuit configuration

4 pack with thermistor

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

1200

170

115

500

250

UNITS

Collector to emitter voltage

V_CES

T_C= 25 °C

_C= 80 °C

Continuous collector current

I_C

Pulsed collector current

I_CM

I_LM

Clamped inductive load current

T_C= 25 °C

T_C= 80 °C

Diode continuous forward current

I_F

Diode maximum forward current

Gate to emitter voltage

I_FSM

V_GE

370

T_C= 25 °C

T_C= 80 °C

595

333

Power dissipation

IGBT

P_D

MODULE

Operating junction temperature range

Storage temperature range

RMS isolation voltage

T_J

-40 to +150

3500

°C

T_Stg

V_ISOL

Any terminal to case, t = 1 s

Revision: 07-Jun-2022

Document Number: 96994

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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