Datasheet > VS-GT120DA65U

VS-GT120DA65U

更新时间： 2024-11-01 15:57:47

品牌	Logo	应用领域
威世 - VISHAY		栅
页数	文件大小	规格书
9页	274K
描述
Insulated Gate Bipolar Transistor,

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中文翻译

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技术参数
数据手册

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VS-GT120DA65U 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.83	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

VS-GT120DA65U 数据手册

VS-GT120DA65U

Vishay Semiconductors

www.vishay.com

Insulated Gate Bipolar Transistor

(Trench IGBT), 650 V, 120 A

FEATURES

• Trench IGBT technology with positive

temperature coefficient

• Square RBSOA

• FRED Pt^®antiparallel diodes with ultrasoft

reverse recovery

• Fully isolated package

• Very low internal inductance ( 5 nH typical)

• Industry standard outline

• UL pending

SOT-227

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PRODUCT SUMMARY

BENEFITS

V_CES

650 V

120 A at 90 °C

1.71 V

• Designed for increased operating efficiency in power

conversion: UPS, SMPS, welding, induction heating

I_CDC

V_CE(on)typical at 100 A, 25 °C

• Easy to assemble and parallel

I_FDC

Speed

76 A at 90 °C

8 kHz to 30 kHz

SOT-227

• Direct mounting to heatsink

• Plug-in compatible with other SOT-227 packages

• Lower conduction losses and switching losses

• Low EMI, requires less snubbing

Package

Circuit

Single switch diode

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

MAX.

650

167

120

220

110

UNITS

Collector to emitter voltage

V_CES

T_C= 25 °C

T_C= 90 °C

Continuous collector current

I_C

Pulsed collector current

I_CM

I_LM

Clamped inductive load current

T_C= 25 °C

T_C= 90 °C

Diode continuous forward current

I_F

Single pulse forward current

Gate-to-emitter voltage

I_FSM

V_GE

10 ms sine or 6 ms rectangular pulse, T_J= 25 °C

550

T_C= 25 °C

577

327

238

135

2500

Power dissipation, IGBT

P_D

T_C= 90 °C

T_C= 25 °C

Power dissipation, diode

Isolation voltage

P_D

T_C= 90 °C

V_ISOL

Any terminal to case, t = 1 min

Revision: 31-May-16

Document Number: 95737

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与VS-GT120DA65U相关器件

型号	品牌	获取价格	描述	数据表
VS-GT150YG120NT	VISHAY	获取价格	IGBT ECONO 3 Module, 150 A
VS-GT180DA120U	VISHAY	获取价格	Insulated Gate Bipolar Transistor (Trench IGBT), 180 A
VS-GT200TS065N	VISHAY	获取价格	“Half Bridge” High Speed IGBT INT-A-PAK, 200
VS-GT200TS065S	VISHAY	获取价格	“Half Bridge” Low VCE(on) IGBT INT-A-PAK, 200
VS-GT250SA60S	VISHAY	获取价格	Insulated Gate Bipolar Transistor Ultralow VCE(on), 250 A
VS-GT300TD60S	VISHAY	获取价格	Dual INT-A-PAK Low Profile "Half Bridge" (Standard Speed IGBT), 300 A
VS-GT300YH120N	VISHAY	获取价格	DIAP Trench IGBT Power Module - 1200 V, 300 A Current Fed Inverter Topology
VS-GT400LH060N	VISHAY	获取价格	Low Side Chopper 600 V, 400 A, DIAP IGBT Power Module (Trench Field Stop IGBT)
VS-GT400TD60S	VISHAY	获取价格	Dual INT-A-PAK Low Profile "Half Bridge" (Standard Speed IGBT), 400 A
VS-GT50LA65UF	VISHAY	获取价格	“Low Side Chopper” IGBT SOT-227, 650 V, 50 A

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