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VS-GT100DA120U PDF预览

VS-GT100DA120U

更新时间： 2024-10-31 19:15:59
品牌 Logo 应用领域
威世 - VISHAY 栅
页数 文件大小 规格书
10页 172K
描述
Insulated Gate Bipolar Transistor

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中文翻译

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VS-GT100DA120U 技术参数

生命周期：ObsoleteReach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.72
Base Number Matches：1

VS-GT100DA120U 数据手册

 浏览型号VS-GT100DA120U的Datasheet PDF文件第2页浏览型号VS-GT100DA120U的Datasheet PDF文件第3页浏览型号VS-GT100DA120U的Datasheet PDF文件第4页浏览型号VS-GT100DA120U的Datasheet PDF文件第5页浏览型号VS-GT100DA120U的Datasheet PDF文件第6页浏览型号VS-GT100DA120U的Datasheet PDF文件第7页 
VS-GT100DA120U  
Vishay Semiconductors  
www.vishay.com  
Insulated Gate Bipolar Transistor  
(Trench IGBT), 100 A  
FEATURES  
• Trench IGBT technology with positive  
temperature coefficient  
• Square RBSOA  
• 10 μs short circuit capability  
• HEXFRED® antiparallel diodes with ultrasoft reverse  
recovery  
SOT-227  
• TJ maximum = 150 °C  
• Fully isolated package  
• Very low internal inductance (5 nH typical)  
• Industry standard outline  
• UL approved file E78996  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
PRODUCT SUMMARY  
VCES  
1200 V  
100 A at 119 °C  
1.73 V  
I
C DC  
VCE(on) typical at 100 A, 25 °C  
Package  
BENEFITS  
• Designed for increased operating efficiency in power  
conversion: UPS, SMPS, welding, induction heating  
SOT-227  
• Easy to assemble and parallel  
• Direct mounting to heatsink  
• Plug-in compatible with other SOT-227 packages  
• Speed 4 kHz to 30 kHz  
Circuit  
Single Switch Diode  
• Very low VCE(on)  
• Low EMI, requires less snubbing  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
1200  
258  
174  
450  
450  
50  
UNITS  
Collector to emitter voltage  
VCES  
V
TC = 25 °C  
C = 80 °C  
(1)  
Continuous collector current  
IC  
T
Pulsed collector current  
ICM  
ILM  
Clamped inductive load current  
A
TC = 25 °C  
C = 80 °C  
Diode continuous forward current  
IF  
T
34  
Peak diode forward current  
Gate to emitter voltage  
IFSM  
VGE  
180  
20  
V
W
V
TC = 25 °C  
893  
221  
176  
44  
Power dissipation, IGBT  
PD  
TC = 119 °C  
TC = 25 °C  
Power dissipation, diode  
Isolation voltage  
PD  
TC = 119 °C  
VISOL  
Any terminal to case, t = 1 min  
2500  
Note  
(1)  
Maximum continuous collector current must be limited to 100 A to do not exceed the maximum temperature of terminals  
Revision: 13-Sep-13  
Document Number: 93196  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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