Datasheet > UPA2721AGR-E1-AT

UPA2721AGR-E1-AT

更新时间： 2024-11-06 21:18:15

品牌	Logo	应用领域
日电电子 - NEC		开关脉冲光电二极管晶体管
页数	文件大小	规格书
6页	160K
描述
Power Field-Effect Transistor, 19A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWER, SOP-8

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技术参数
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UPA2721AGR-E1-AT 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
零件包装代码：	SOT	包装说明：	SMALL OUTLINE, R-PDSO-G8
针数：	8	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.3
雪崩能效等级（Eas）：	36 mJ	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V	最大漏极电流 (ID)：	19 A
最大漏源导通电阻：	0.01 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G8	JESD-609代码：	e3
元件数量：	1	端子数量：	8
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	200 A	认证状态：	Not Qualified
表面贴装：	YES	端子面层：	MATTE TIN
端子形式：	GULL WING	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

UPA2721AGR-E1-AT 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

μPA2721AGR

SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The μ PA2721AGR is N-channel MOS Field Effect Transistor

designed for power management applications of a notebook

computer.

1, 2, ꢀ : Source

: Gate

5, 6, 7, 8: Drain

FEATURES

• Low on-state resistance

RDS(on)1 = 4.3 mΩ MAX. (VGS = 10 V, ID = 10 A)

R^DS(on)2= 10 mΩ MAX. (VGS = 5.0 V, ID = 10 A)

• Low input capacitance

6.0 0.ꢀ

4.4

5.ꢀ7 MAX.

0.8

C^iss= 7100 pF TYP. (VDS = 10 V, VGS = 0 V)

• Built-in gate protection diode

• Small and surface mount package (Power SOP8)

• RoHS Compliant

0.5 0.2

0.10

1.27 0.78 MAX.

+0.10

0.40

0.12 M

–0.05

ORDERING INFORMATION

PART NUMBER

LEAD PLATING

Pure Sn

PACKING

PACKAGE

μ PA2721AGR-E1-AT ^Note

μ PA2721AGR-E2-AT ^Note

Power SOP8

0.08 g TYP.

Tape 2500 p/reel

Note Pb-free (This product does not contain Pb in external electrode and other parts.)

EQUIVALENT CIRCUIT

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C, All terminals are connected.)

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC)

VDSS

VGSS

I^D(DC)

I^D(pulse)

P^T1

Drain

200

Drain Current (pulse) ^Note1

Body

Diode

Gate

Total Power Dissipation ^Note2

Total Power Dissipation (PW = 10 sec) ^Note2

Channel Temperature

1.1

°C

P^T2

2.5

Gate

Protection

Diode

T^ch

150

Source

Storage Temperature

T^stg

−55 to +150

Single Avalanche Current ^Note3

Single Avalanche Energy ^Note3

Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%

I^AS

E^AS

2. Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt

3. Starting T^ch= 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. G18705EJ1V0DS00 (1st edition)

Date Published September 2008 NS

Printed in Japan

2007, 2008

12 3 4 5 6

中文翻译

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与UPA2721AGR-E1-AT相关器件

型号	品牌	获取价格	描述	数据表
UPA2721GR-E1	RENESAS	获取价格	19A, 30V, 0.0063ohm, N-CHANNEL, Si, POWER, MOSFET, POWER SOP-8
UPA2721GR-E1	NEC	获取价格	Power Field-Effect Transistor, 19A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Me
UPA2721GR-E1-A	RENESAS	获取价格	19A, 30V, 0.0063ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, POWER SOP-8
UPA2721GR-E1-A	NEC	获取价格	Power Field-Effect Transistor, 19A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Me
UPA2721GR-E2-A	RENESAS	获取价格	19A, 30V, 0.0063ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, POWER SOP-8
UPA2723T1A-E1-AY	NEC	获取价格	Power Field-Effect Transistor, 33A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Me
UPA2723T1A-E1-AZ	NEC	获取价格	Power Field-Effect Transistor, 33A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Me
UPA2723UT1A-E1-AZ	NEC	获取价格	Power Field-Effect Transistor, 33A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Me
UPA2723UT1A-E2-AY	NEC	获取价格	Power Field-Effect Transistor, 33A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Me
UPA2723UT1A-E2-AZ	NEC	获取价格	Power Field-Effect Transistor, 33A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Me

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