UPA2719GR-A

更新时间： 2024-09-16 13:15:11

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数	文件大小	规格书
7页	141K
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中文翻译

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数据手册

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UPA2719GR-A 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µ PA2719GR

SWITCHING

P-CHANNEL POWER MOS FET

PACKAGE DRAWING (Unit: mm)

DESCRIPTION

The µ PA2719GR is P-Channel MOS Field Effect Transistor

designed for power management applications of notebook

computers and Li-ion battery protection circuit.

1, 2, 3

: Source

: Gate

5, 6, 7, 8 : Drain

FEATURES

• Low on-state resistance

R^DS(on)1= 13 mΩ MAX. (VGS = −10 V, ID = −5.0 A)

6.0 ±0.3

4.4

R^DS(on)2= 20.9 mΩ MAX. (VGS = −4.5 V, ID = −5.0 A)

5.37 MAX.

0.8

• Low Ciss: Ciss = 2010 pF TYP.

• Built-in gate protection diode

• Small and surface mount package (Power SOP8)

0.5 ±0.2

ORDERING INFORMATION

0.10

1.27 0.78 MAX.

+0.10

–0.05

PART NUMBER

PACKAGE

0.40

0.12 M

µ PA2719GR

Power SOP8

ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (VDS = 0 V)

Drain Current (DC)

VDSS

VGSS

I^D(DC)

ID(pulse)

PT1

PT2

T^ch

T^stg

IAS

–30

m20

m10

m100

150

EQUIVALENT CIRCUIT

Drain Current (pulse) ^Note1

Drain

Note2

Total Power Dissipation

°C

Note3

Body

Diode

Gate

Channel Temperature

Storage Temperature

–55 to + 150

−10

Gate

Single Avalanche Current ^Note4

Single Avalanche Energy ^Note4

Protection

Diode

Source

E^AS

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Mounted on ceramic substrate of 1200 mm²x 2.2 mm

3. Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm, PW = 10 sec

4. Starting T^ch= 25°C, VDD = –15 V, RG = 25 Ω, L = 100 µH, VGS = –20 → 0 V

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. G16953EJ1V0DS00 (1st edition)

Date Published July 2004 NS CP(K)

Printed in Japan

2004

12 3 4 5 6 7

中文翻译

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与UPA2719GR-A相关器件

型号	品牌	获取价格	描述	数据表
UPA2719GR-E1	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,10A I(D),SO
UPA2719GR-E2	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,10A I(D),SO
UPA2720AGR-E1-AT	RENESAS	获取价格	14A, 30V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8
UPA2720AGR-E2-AT	RENESAS	获取价格	14A, 30V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8
UPA2720GR-E1-A	NEC	获取价格	Power Field-Effect Transistor, 14A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
UPA2720GR-E1-A	RENESAS	获取价格	14A, 30V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, POWER SOP-8
UPA2720GR-E2	NEC	获取价格	Power Field-Effect Transistor, 14A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
UPA2720GR-E2-A	NEC	获取价格	Power Field-Effect Transistor, 14A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
UPA2721AGR-E1-AT	NEC	获取价格	Power Field-Effect Transistor, 19A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
UPA2721GR-E1	RENESAS	获取价格	19A, 30V, 0.0063ohm, N-CHANNEL, Si, POWER, MOSFET, POWER SOP-8

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