Datasheet > UPA2720GR-E2

UPA2720GR-E2

更新时间： 2024-11-07 06:48:15

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
6页	146K
描述
Power Field-Effect Transistor, 14A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER SOP-8

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中文翻译

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UPA2720GR-E2 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µ PA2720GR

SWITCHING

N-CHANNEL POWER MOSFET

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The µ PA2720GR is N-channel MOS Field Effect Transistor

designed for power management applications of notebook

computers and Li-ion battery protection circuit.

1, 2, ꢀ : Source

: Gate

5, 6, 7, 8: Drain

FEATURES

• Low on-state resistance

6.0 0.ꢀ

4.4

R^DS(on)1= 6.6 mΩ MAX. (VGS = 10 V, ID = 7 A)

R^DS(on)2= 10 mΩ MAX. (VGS = 4.5 V, ID = 7 A)

• Low C^iss: Ciss = 2800 pF TYP. (VDS = 10 V, VGS = 0 V)

• Built-in gate protection diode

5.ꢀ7 MAX.

0.8

0.5 0.2

• Small and surface mount package (Power SOP8)

0.10

1.27 0.78 MAX.

+0.10

–0.05

0.40

0.12 M

ORDERING INFORMATION

PART NUMBER

µ PA2720GR-E1

µ PA2720GR-E1-A

µ PA2720GR-E2

µ PA2720GR-E2-A

PACKAGE

Power SOP8

Note

EQUIVALENT CIRCUIT

Drain

Note Pb-free (This product does not contain Pb in external electrode and other parts.)

Body

Diode

Gate

ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC)

VDSS

VGSS

I^D(DC)

I^D(pulse)

P^T1

P^T2

T^ch

140

1.1

Gate

Protection

Diode

Source

Drain Current (pulse) ^Note1

Total Power Dissipation ^Note2

Total Power Dissipation (PW = 10 sec) ^Note2

Channel Temperature

°C

2.5

150

–55 to +150

Storage Temperature

T^stg

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. G17443EJ1V0DS00 (1st edition)

Date Published July 2005 NS CP(K)

Printed in Japan

2005

12 3 4 5 6

中文翻译

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与UPA2720GR-E2相关器件

型号	品牌	获取价格	描述	数据表
UPA2720GR-E2-A	NEC	获取价格	Power Field-Effect Transistor, 14A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
UPA2721AGR-E1-AT	NEC	获取价格	Power Field-Effect Transistor, 19A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
UPA2721GR-E1	RENESAS	获取价格	19A, 30V, 0.0063ohm, N-CHANNEL, Si, POWER, MOSFET, POWER SOP-8
UPA2721GR-E1	NEC	获取价格	Power Field-Effect Transistor, 19A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Me
UPA2721GR-E1-A	RENESAS	获取价格	19A, 30V, 0.0063ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, POWER SOP-8
UPA2721GR-E1-A	NEC	获取价格	Power Field-Effect Transistor, 19A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Me
UPA2721GR-E2-A	RENESAS	获取价格	19A, 30V, 0.0063ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, POWER SOP-8
UPA2723T1A-E1-AY	NEC	获取价格	Power Field-Effect Transistor, 33A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Me
UPA2723T1A-E1-AZ	NEC	获取价格	Power Field-Effect Transistor, 33A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Me
UPA2723UT1A-E1-AZ	NEC	获取价格	Power Field-Effect Transistor, 33A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Me

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