Datasheet > UPA2201T1M-T1-AT

UPA2201T1M-T1-AT

更新时间： 2024-11-20 18:28:35

品牌	Logo	应用领域
日电电子 - NEC		开关脉冲光电二极管晶体管
页数	文件大小	规格书
6页	158K
描述
Power Field-Effect Transistor, 9A I(D), 20V, 0.0185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, 1629, VSOF-8

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UPA2201T1M-T1-AT 技术参数

生命周期：	Transferred	包装说明：	LEAD FREE, 1629, VSOF-8
Reach Compliance Code：	unknown	风险等级：	5.72
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	20 V
最大漏极电流 (ID)：	9 A	最大漏源导通电阻：	0.0185 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PDSO-F8
元件数量：	1	端子数量：	8
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL	最大脉冲漏极电流 (IDM)：	36 A
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

UPA2201T1M-T1-AT 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

μPA2201T1M

N-CHANNEL MOS FET

FOR SWITCHING

PACKAGE DRAWING (Unit: mm)

DESCRIPTION

The μ PA2201T1M is N-channel MOS Field Effect Transistor designed

for power management applications of portable equipments, such as

load switch.

2.9 0.1

0.65

0.145 0.05

0 to 0.025

FEATURES

• Low on-state resistance

R^DS(on)1= 18.5 mΩ MAX. (VGS = 4.5 V, ID = 9 A)

R^DS(on)2= 27 mΩ MAX. (VGS = 2.5 V, ID = 4.5 A)

• Built-in gate protection diode

• 2.5 V Gate drive available

0.32 0.05

0.05 M S A

1, 2, 3, 6, 7, 8: Drain

: Gate

: Source

ORDERING INFORMATION

0.05 S

PART NUMBER

μ PA2201T1M-T1-AT

μ PA2201T1M-T2-AT

PACKING

PACKAGE

Note

8 mm embossed taping

3000 p/reel

8-pin VSOF (1629)

0.011 g TYP.

Note Pb-free (This product does not contain Pb in external electrode and

other parts.)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC)

VDSS

VGSS

I^D(DC)

I^D(pulse)

P^T1

EQUIVALENT CIRCUIT

Drain

Drain Current (pulse) ^Note1

Total Power Dissipation ^Note2

Total Power Dissipation (PW = 5 sec) ^Note2

Channel Temperature

1.1

2.5

150

°C

Body

Diode

Gate

P^T2

T^ch

Storage Temperature

T^stg

−55 to +150 °C

Gate

Protection

Source

Diode

Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%

2. Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. G19447EJ1V0DS00 (1st edition)

Date Published September 2008 NS

Printed in Japan

2008

12 3 4 5 6

中文翻译

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与UPA2201T1M-T1-AT相关器件

型号	品牌	获取价格	描述	数据表
UPA2201T1M-T2-AT	NEC	获取价格	Power Field-Effect Transistor, 9A I(D), 20V, 0.0185ohm, 1-Element, N-Channel, Silicon, Met
UPA2210T1M-T1-AT	NEC	获取价格	Power Field-Effect Transistor, 7.2A I(D), 20V, 0.029ohm, 1-Element, P-Channel, Silicon, Me
UPA2210T1M-T2-AT	NEC	获取价格	Power Field-Effect Transistor, 7.2A I(D), 20V, 0.029ohm, 1-Element, P-Channel, Silicon, Me
UPA2211T1M-T1-AT	RENESAS	获取价格	UPA2211T1M-T1-AT
UPA2211T1M-T1-AT	NEC	获取价格	Power Field-Effect Transistor, 7.5A I(D), 12V, 0.025ohm, 1-Element, P-Channel, Silicon, Me
UPA2211T1M-T2-AT	NEC	获取价格	Power Field-Effect Transistor, 7.5A I(D), 12V, 0.025ohm, 1-Element, P-Channel, Silicon, Me
UPA2350BT1G-E4-A	NEC	获取价格	Power Field-Effect Transistor, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FE
UPA2350BT1P-E4-A	RENESAS	获取价格	UPA2350BT1P-E4-A
UPA2350T1G-E4-A	NEC	获取价格	Power Field-Effect Transistor, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FE
UPA2350T1P	RENESAS	获取价格	MOS FIELD EFFECT TRANSISTOR

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