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TPCS8006 PDF预览

TPCS8006

更新时间: 2024-11-24 03:26:47
品牌 Logo 应用领域
东芝 - TOSHIBA 开关
页数 文件大小 规格书
4页 163K
描述
High-Speed Switching Applications

TPCS8006 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Transferred包装说明:2-3R1F, 8 PIN
针数:8Reach Compliance Code:unknown
风险等级:5.38配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:250 V最大漏极电流 (ID):1.1 A
最大漏源导通电阻:1 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

TPCS8006 数据手册

 浏览型号TPCS8006的Datasheet PDF文件第2页浏览型号TPCS8006的Datasheet PDF文件第3页浏览型号TPCS8006的Datasheet PDF文件第4页 
TPCS8006  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)  
TPCS8006  
High-Speed Switching Applications  
Unit: mm  
Switching Regulator Applications  
DC-DC Converter Applications  
Low drain-source ON resistance: R  
= 0.8 (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 1.6 S (typ.)  
fs  
= 100 µA (max) (V  
Low leakage current: I  
= 250 V)  
DS  
DSS  
Enhancement model: V = 1.5~3.5 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Maximum Ratings  
=
(Ta 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
250  
250  
±20  
1.1  
V
V
V
DSS  
Drain-gate voltage (R  
= 20 k)  
V
DGR  
GS  
1.2.3. Gate  
Gate-source voltage  
V
GSS  
4
Source  
5.6.7.8 Drain  
DC  
(Note 1)  
I
D
Drain current  
A
Pulse (Note 1)  
I
4.4  
DP  
JEDEC  
JEITA  
Drain power dissipation (t = 10 s)  
(Note 2a)  
P
1.5  
0.6  
D
D
W
Drain power dissipation (t = 10 s)  
(Note 2b)  
P
TOSHIBA  
2-3R1F  
Weight: 0.035 g (typ.)  
Single pulse avalanche energy(Note3)  
Avalanche current  
E
0.07  
1.1  
mJ  
A
AS  
I
AR  
Repetitive avalanche energy  
(Note2a, Note 4)  
E
0.15  
mJ  
AR  
Circuit Configuration  
8
7
6
5
Channel temperature  
T
150  
°C  
°C  
ch  
Storage temperature range  
T
stg  
55~150  
Note 1, Note 2, Note 3 and Note 4: See the next page.  
This transistor is an electrostatic-sensitive device. Please handle with caution.  
1
2
3
4
1
2004-07-06  

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