生命周期: | End Of Life | 包装说明: | SMALL OUTLINE, R-PDSO-F8 |
针数: | 8 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.31 |
Is Samacsys: | N | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 40 V | 最大漏极电流 (Abs) (ID): | 6 A |
最大漏极电流 (ID): | 6 A | 最大漏源导通电阻: | 0.036 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-F8 |
元件数量: | 2 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL AND P-CHANNEL |
最大功率耗散 (Abs): | 1.48 W | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TPCP8406(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,40V V(BR)DSS,6A I(D),FP | |
TPCP8406(TE85L,F) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,40V V(BR)DSS,6A I(D),FP | |
TPCP8406,LF(CM | TOSHIBA |
获取价格 |
6000mA, 40V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET | |
TPCP8407 | TOSHIBA |
获取价格 |
PN Complementary | |
TPCP8407,LF | TOSHIBA |
获取价格 |
Small Signal Field-Effect Transistor | |
TPCP8501 | TOSHIBA |
获取价格 |
TOSHIBA Transistor Silicon NPN Epitaxial Type | |
TPCP8503 | TOSHIBA |
获取价格 |
TRANSISTOR 0.05 A, 600 V, NPN, Si, POWER TRANSISTOR, 2-3V1D, 8 PIN, BIP General Purpose Po | |
TPCP8504 | TOSHIBA |
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TOSHIBA Transistor Silicon NPN Epitaxial Type | |
TPCP8504(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,NPN,10V V(BR)CEO,2A I(C),TSOP | |
TPCP8505 | TOSHIBA |
获取价格 |
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process |