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TPCP8404(TE85L,F) PDF预览

TPCP8404(TE85L,F)

更新时间： 2024-09-18 20:02:11
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
11页 286K
描述
TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,30V V(BR)DSS,4A I(D),TSOP

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TPCP8404(TE85L,F) 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：,Reach Compliance Code：unknown
风险等级：5.61最大漏极电流 (Abs) (ID)：4 A
FET 技术：METAL-OXIDE SEMICONDUCTOR工作模式：ENHANCEMENT MODE
最高工作温度：150 °C极性/信道类型：N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs)：1.48 W子类别：Other Transistors
表面贴装：YESBase Number Matches：1

TPCP8404(TE85L,F) 数据手册

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TPCP8404  
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOⅤ/U-MOSⅣ)  
TPCP8404  
Portable Equipment Applications  
Motor Drive Applications  
Unit: mm  
0.33±0.05  
•
Low drain-source ON-resistance : P Channel R  
= 38 mΩ(typ.)  
(VGS=−10V)  
= 38 mΩ(typ.)  
A
M
DS (ON)  
0.05  
5
8
N Channel R  
DS (ON)  
（VGS=10V)  
•
•
•
High forward transfer admittance : P Channel |Y | = 7.3 S (typ.)  
fs  
N Channel |Y | = 8 S (typ.)  
fs  
0.475  
1
4
B
B
M
0.05  
0.65  
Low leakage current : P Channel I  
= −10 μA (max) (V  
= −30 V)  
DSS  
DS  
2.9±0.1  
A
N Channel I  
= 10 μA (max) (V  
= 30 V)  
DSS  
DS  
0.8±0.05  
Enhancement mode  
: P Channel V = −0.8 to −2.0 V (V  
= −10 V, I = −1 mA)  
th  
DS  
D
S
0.025  
+0.1  
S
0.28  
0.17±0.02  
-0.11  
N Channel V = 1.3 to 2.5 V (V  
= 10 V, I = 1 mA)  
th  
DS  
D
+0.13  
-0.12  
1.12  
1.12  
Absolute Maximum Ratings (Ta = 25°C)  
+0.13  
-0.12  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
+0.1  
-0.11  
1．Source1  
2．Gate1  
5．Drain2  
6．Drain2  
7．Drain1  
8．Drain1  
0.28  
V
−30  
−30  
±20  
−4  
30  
30  
±20  
4
V
V
V
DSS  
3．Source2  
4．Gate2  
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
V
GS  
DGR  
V
GSS  
JEDEC  
JEITA  
⎯
⎯
DC  
(Note 1)  
(Note 1)  
I
D
Drain  
A
current  
Pulse  
I
−16  
16  
DP  
Single-device operation  
(Note 3a)  
Drain power  
dissipation  
(t = 5 s)  
P
P
P
P
1.48  
1.23  
0.58  
0.36  
1.48  
1.23  
0.58  
0.36  
D (1)  
TOSHIBA  
2-3V1G  
Single-device value at  
dual operation (Note 3b)  
Weight: 0.017 g (typ.)  
D (2)  
D (1)  
D (2)  
(Note 2a)  
W
Single-device operation  
(Note 3a)  
Drain power  
dissipation  
(t = 5 s)  
Circuit Configuration  
Single-device value at  
dual operation (Note 3b)  
8
5
7
6
(Note 2b)  
Single pulse avalanche energy  
(Note 4)  
E
2.6  
2.6  
2
mJ  
A
AS  
Avalanche current  
I
−2  
AR  
Repetitive avalanche energy  
Single-device value at dual operation  
(Note 2a, 3b, 5)  
E
0.009  
150  
mJ  
AR  
Channel temperature  
T
°C  
°C  
ch  
2
Marking (Note 6)  
1
4
3
Storage temperature range  
T
−55 to 150  
stg  
Note: For Notes 1 to 5, refer to the next page.  
8
7
6
5
Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability  
Handbook (“Handling Precautions”/“Derating Concept and  
Methods”) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
8404  
1
2
3
4
This transistor is an electrostatic-sensitive device. Handle with caution.  
Lot No.  
1
2010-02-01  
1234567...11

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