Datasheet > TPC8229-H(TE12L,Q)

TPC8229-H(TE12L,Q)

更新时间： 2024-10-03 07:36:59

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	255K
描述
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,80V V(BR)DSS,3.2A I(D),SO

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TPC8229-H(TE12L,Q) 技术参数

TPC8229-H

MOSFETs Silicon N-Channel MOS (U-MOS-H)

TPC8229-H

1. Applications

•

DC-DC Converters

•

CCFL Inverters

2. Features

(1) High-speed switching

(2) Small gate charge: QSW = 2.4 nC (typ.)

(3) Low drain-source on-resistance: RDS(ON) = 53 mΩ (typ.)

(4) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)

(5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)

3. Packaging and Internal Circuit

1, 3: Source

2, 4: Gate

5, 6, 7, 8: Drain

SOP-8

2012-12-28

Rev.2.0

12 3 4 5 6 7...9

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