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TPC8010-H(TE12L,Q) PDF预览

TPC8010-H(TE12L,Q)

更新时间： 2024-11-02 19:47:35
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
7页 219K
描述
Small Signal Field-Effect Transistor

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TPC8010-H(TE12L,Q) 技术参数

生命周期：Active包装说明：,
Reach Compliance Code：unknown风险等级：5.73
Base Number Matches：1

TPC8010-H(TE12L,Q) 数据手册

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TPC8010-H  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (High-speed U-MOSIII)  
TPC8010-H  
High Efficiency DC-DC Converter Applications  
Unit: mm  
Notebook PC Applications  
Portable-Equipment Applications  
•
•
•
•
•
•
•
Small footprint due to a small package  
High-speed switching  
Small gate charge: Q = 18 nC (typ.)  
g
Low drain-source ON-resistance: R  
= 12 mΩ (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 11 S (typ.)  
fs  
Low leakage current: I  
= 10 μA (max) (V  
= 30 V)  
DSS  
DS  
Enhancement mode: V = 1.1 to 2.3 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
JEDEC  
JEITA  
―
―
V
30  
30  
V
V
V
DSS  
V
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
DGR  
GS  
TOSHIBA  
2-6J1B  
V
±20  
11  
GSS  
DC  
(Note 1)  
I
Weight: 0.085 g (typ.)  
D
Drain current  
A
Pulse (Note 1)  
I
44  
DP  
Drain power dissipation  
Drain power dissipation  
(t = 10 s)  
(Note 2a)  
(t = 10 s)  
(Note 2b)  
P
1.9  
1.0  
W
W
D
D
Circuit Configuration  
P
8
7
6
5
Single-pulse avalanche energy  
(Note 3)  
E
157  
11  
mJ  
A
AS  
Avalanche current  
I
AR  
Repetitive avalanche energy  
E
0.19  
mJ  
AR  
(Note 2a) (Note 4)  
T
T
150  
°C  
°C  
Channel temperature  
ch  
1
2
3
4
−55 to 150  
Storage temperature range  
stg  
Note: For Notes 1 to 4, refer to the next page.  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2006-11-16  
1234567

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