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TPC8035-H PDF预览

TPC8035-H

更新时间: 2024-09-27 08:40:07
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体晶体管场效应晶体管
页数 文件大小 规格书
7页 217K
描述
Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)

TPC8035-H 数据手册

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TPC8035-H  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H)  
TPC8035-H  
High Efficiency DC-DC Converter Applications  
Notebook PC Applications  
Unit: mm  
Portable Equipment Applications  
Small footprint due to small and thin package  
High-speed switching  
Small gate charge: QSW = 17 nC (typ.)  
Low drain-source ON-resistance: RDS (ON) = 2.3 mΩ (typ.)  
High forward transfer admittance: |Yfs| = 70 S (typ.)  
Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)  
Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1 mA)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
30  
30  
V
V
V
DSS  
V
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
DGR  
GS  
V
±20  
18  
GSS  
JEDEC  
JEITA  
DC  
(Note 1)  
I
D
Drain current  
A
Pulsed (Note 1)  
I
72  
DP  
TOSHIBA  
2-6J1B  
Drain power dissipation  
Drain power dissipation  
(t = 10 s)  
(Note 2a)  
(t = 10 s)  
(Note 2b)  
P
1.9  
1.0  
W
W
D
D
Weight: 0.085 g (typ.)  
P
Circuit Configuration  
Single pulse avalanche energy  
(Note 3)  
E
211  
18  
mJ  
A
AS  
8
7
6
5
Avalanche current  
I
AR  
Repetitive avalanche energy  
E
0.082  
mJ  
AR  
(Note 2a) (Note 4)  
T
T
150  
°C  
°C  
Channel temperature  
ch  
55 to 150  
Storage temperature range  
stg  
1
2
3
4
Note: For Notes 1 to 4, refer to the next page.  
Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to  
decrease in the reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derating”  
Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2008-08-22  

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