Datasheet > TPC8042

TPC8042

更新时间： 2024-11-02 05:52:43

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管场效应晶体管
页数	文件大小	规格书
7页	201K
描述
Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

TPC8042 技术参数

生命周期：	Lifetime Buy	包装说明：	SMALL OUTLINE, R-PDSO-G8
针数：	8	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.38
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	30 V
最大漏极电流 (ID)：	18 A	最大漏源导通电阻：	0.0065 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PDSO-G8
元件数量：	1	端子数量：	8
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

TPC8042 数据手册

TPC8042

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)

TPC8042

Lithium-Ion Battery Applications

Unit: mm

Portable Equipment Applications

Notebook PC Applications

•

Small footprint due to a small and thin package

Low drain-source ON-resistance: R = 2.7 mΩ (typ.)

DS (ON)

High forward transfer admittance: |Y | = 42 S (typ.)

Low leakage current: I

= 10 μA (max) (V

= 30 V)

DSS

Enhancement mode: V = 1.3 to 2.5 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

±20

GSS

(Note 1)

JEDEC

JEITA

⎯

Drain current

Pulse (Note 1)

Drain power dissipation

(t = 10 s)

(Note 2a)

TOSHIBA

2-6J1B

1.9

1.0

Weight: 0.08 g (typ.)

(t = 10 s)

(Note 2b)

Single pulse avalanche energy

(Note 3)

Circuit Configuration

Avalanche current

Repetitive avalanche energy

0.044

(Note 2a) (Note 4)

150

°C

Channel temperature

−55 to 150

Storage temperature range

stg

Note: For Notes 1 to 4, refer to the next page.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.)

are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.

2009-09-29

12 3 4 5 6 7

中文翻译

下载PDF

与TPC8042相关器件

型号	品牌	获取价格	描述	数据表
TPC8042(TE12L)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,18A I(D),SO
TPC8042(TE12L,Q)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,18A I(D),SO
TPC8045-H	TOSHIBA	获取价格	Switching Regulator Applications Motor Drive Applications DC-DC Converter Applications
TPC8046-H	TOSHIBA	获取价格	TRANSISTOR 18000 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, THIN, 2-6J
TPC8047-H	TOSHIBA	获取价格	TRANSISTOR 16000 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, THIN, 2-6J
TPC8047-H(TE12L)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,16A I(D),SO
TPC8047-H(TE12L,Q)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,16A I(D),SO
TPC8048-H	TOSHIBA	获取价格	Bipolar Small-Signal Transistors
TPC8048-H(TE12L)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,16A I(D),SO
TPC8048-H(TE12L,Q)	TOSHIBA	获取价格	MOSFET N-CH 60V 16A 8-SOP

与TPC8042相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

5
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

2
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

23
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

24

产品中心

服务支持

精选活动

关于我们

帮助中心

TPC8042

TPC8042 技术参数

TPC8042 数据手册

与TPC8042相关器件

与TPC8042相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

TPC8042

TPC8042 技术参数

TPC8042 数据手册

与TPC8042相关器件

与TPC8042相关文章

您还可以找

您在本页遇到什么问题？