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TPC8049-H PDF预览

TPC8049-H

更新时间： 2024-02-09 12:26:04
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体转换器稳压器开关小信号场效应晶体管光电二极管电机驱动
页数 文件大小 规格书
7页 215K
描述
Switching Regulator Applications Motor Drive Applications DC-DC Converter Applications

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中文翻译

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TPC8049-H 技术参数

生命周期：Not Recommended包装说明：SMALL OUTLINE, R-PDSO-G8
针数：8Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.69
Is Samacsys：N配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：60 V最大漏极电流 (ID)：13 A
最大漏源导通电阻：0.0115 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：190 pFJESD-30 代码：R-PDSO-G8
元件数量：1端子数量：8
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子形式：GULL WING
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

TPC8049-H 数据手册

 浏览型号TPC8049-H的Datasheet PDF文件第2页浏览型号TPC8049-H的Datasheet PDF文件第3页浏览型号TPC8049-H的Datasheet PDF文件第4页浏览型号TPC8049-H的Datasheet PDF文件第5页浏览型号TPC8049-H的Datasheet PDF文件第6页浏览型号TPC8049-H的Datasheet PDF文件第7页 
TPC8049-H  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)  
TPC8049-H  
Switching Regulator Applications  
Motor Drive Applications  
Unit: mm  
DC-DC Converter Applications  
•
•
•
•
Small footprint due to a small and thin package  
High-speed switching  
Small gate charge: Q  
= 13 nC (typ.)  
SW  
Low drain-source ON-resistance:  
= 6.9 mΩ (typ.)  
R
DS (ON)  
•
•
•
High forward transfer admittance: |Y | = 48 S (typ.)  
fs  
Low leakage current: I  
= 10 μA (max) (V  
= 60 V)  
DSS  
DS  
Enhancement mode: V = 1.3 to 2.3 V (V  
= 10 V, I = 0.5 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
60  
60  
V
V
V
DSS  
V
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
DGR  
GS  
V
±20  
13  
GSS  
JEDEC  
JEITA  
⎯
⎯
DC  
(Note 1)  
I
D
Drain current  
A
Pulsed (Note 1)  
I
52  
DP  
Drain power dissipation  
Drain power dissipation  
(t = 10 s)  
(Note 2a)  
(t = 10 s)  
(Note 2b)  
TOSHIBA  
2-6J1B  
P
1.9  
1.0  
W
W
D
D
Weight: 0.085g (typ.)  
P
Single-pulse avalanche energy  
(Note 3)  
Circuit Configuration  
E
61  
13  
mJ  
A
AS  
8
7
6
5
Avalanche current  
I
AR  
Repetitive avalanche energy  
E
0.06  
mJ  
AR  
(Tc = 25℃) (Note 4)  
T
T
150  
°C  
°C  
Channel temperature  
ch  
−55 to 150  
Storage temperature range  
stg  
Note: For Notes 1 to 4, refer to the next page.  
1
2
3
4
Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please  
design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and  
estimated failure rate, etc).  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2009-06-18  
1234567

中文翻译

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