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TPC8066-H(TE12L,Q) PDF预览

TPC8066-H(TE12L,Q)

更新时间: 2024-01-18 17:19:45
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
9页 247K
描述
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,11A I(D),SO

TPC8066-H(TE12L,Q) 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
风险等级:5.76配置:Single
最大漏极电流 (Abs) (ID):11 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1.9 W
子类别:FET General Purpose Power表面贴装:YES
Base Number Matches:1

TPC8066-H(TE12L,Q) 数据手册

 浏览型号TPC8066-H(TE12L,Q)的Datasheet PDF文件第2页浏览型号TPC8066-H(TE12L,Q)的Datasheet PDF文件第3页浏览型号TPC8066-H(TE12L,Q)的Datasheet PDF文件第4页浏览型号TPC8066-H(TE12L,Q)的Datasheet PDF文件第5页浏览型号TPC8066-H(TE12L,Q)的Datasheet PDF文件第6页浏览型号TPC8066-H(TE12L,Q)的Datasheet PDF文件第7页 
TPC8066-H  
MOSFETs Silicon N-Channel MOS (U-MOS-H)  
TPC8066-H  
1. Applications  
High-Efficiency DC-DC Converters  
Notebook PCs  
Mobile Handsets  
2. Features  
(1) Small, thin package  
(2) High-speed switching  
(3) Small gate charge: QSW = 3.2 nC (typ.)  
(4) Low drain-source on-resistance: RDS(ON) = 15 m(typ.) (VGS = 4.5 V)  
(5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)  
(6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)  
3. Packaging and Internal Circuit  
1, 2, 3: Source  
4: Gate  
5, 6, 7, 8: Drain  
SOP-8  
2010-11-01  
Rev.1.0  
1

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