Datasheet > TPC8054-H

TPC8054-H

更新时间： 2024-11-25 20:03:19

品牌	Logo	应用领域
东芝 - TOSHIBA		开关光电二极管晶体管
页数	文件大小	规格书
7页	219K
描述
TRANSISTOR 10000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, 2-6J1B, THIN, 8 PIN, FET General Purpose Small Signal

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TPC8054-H 技术参数

生命周期：	Active	包装说明：	SMALL OUTLINE, R-PDSO-G8
针数：	8	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.76
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	100 V
最大漏极电流 (ID)：	10 A	最大漏源导通电阻：	0.0215 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最大反馈电容 (Crss)：	190 pF
JESD-30 代码：	R-PDSO-G8	元件数量：	1
端子数量：	8	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	N-CHANNEL
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

TPC8054-H 数据手册

TPC8054-H

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)

TPC8054-H

Switching Regulator Applications

Motor Drive Applications

Unit: mm

DC-DC Converter Applications

•

Small footprint due to a small and thin package

High-speed switching

Small gate charge: Q

= 18 nC (typ.)

Low drain-source ON-resistance:

= 13.3 mΩ (typ.)

DS (ON)

•

High forward transfer admittance: |Y | = 38 S (typ.)

Low leakage current: I

= 10 μA (max) (V

= 100 V)

DSS

Enhancement mode: V = 1.3 to 2.3 V (V

= 10 V, I = 1.0 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Drain-source voltage

Symbol

Rating

Unit

100

±20

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

JEDEC

JEITA

⎯

(Note 1)

Drain current

Pulsed (Note 1)

Drain power dissipation

(t = 10 s)

(Note 2a)

TOSHIBA

2-6J1B

1.9

1.0

Weight: 0.085g (typ.)

(t = 10 s)

(Note 2b)

Single-pulse avalanche energy

(Note 3)

Circuit Configuration

Avalanche current

Repetitive avalanche energy

0.04

(Note 2a) (Note 4)

150

°C

Channel temperature

−55 to 150

Storage temperature range

stg

Note: For Notes 1 to 4, refer to the next page.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.

2009-09-16

12 3 4 5 6 7

中文翻译

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与TPC8054-H相关器件

型号	品牌	获取价格	描述	数据表
TPC8054-H(TE12L)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,10A I(D),SO
TPC8059-H(TE12L,Q)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,18A I(D),SO
TPC8060-H	TOSHIBA	获取价格	TRANSISTOR 18000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, THIN, 2-6J1B, 8
TPC8061-H	UNITPOWER	获取价格	3A Ultra Low Dropout Linear Regulator
TPC8061-H	TOSHIBA	获取价格	Silicon N-Channel MOS Type (U-MOSⅥ-H)
TPC8061-H(TE12L)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,8A I(D),SO
TPC8062-H(TE12L)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,18A I(D),SO
TPC8062-H(TE12L,Q)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,18A I(D),SO
TPC8063-H	TOSHIBA	获取价格	Bipolar Small-Signal Transistors
TPC8063-H(TE12L)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,17A I(D),SO

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