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TPC8054-H PDF预览

TPC8054-H

更新时间: 2024-11-02 20:03:19
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
7页 219K
描述
TRANSISTOR 10000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, 2-6J1B, THIN, 8 PIN, FET General Purpose Small Signal

TPC8054-H 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.76
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (ID):10 A最大漏源导通电阻:0.0215 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):190 pF
JESD-30 代码:R-PDSO-G8元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

TPC8054-H 数据手册

 浏览型号TPC8054-H的Datasheet PDF文件第2页浏览型号TPC8054-H的Datasheet PDF文件第3页浏览型号TPC8054-H的Datasheet PDF文件第4页浏览型号TPC8054-H的Datasheet PDF文件第5页浏览型号TPC8054-H的Datasheet PDF文件第6页浏览型号TPC8054-H的Datasheet PDF文件第7页 
TPC8054-H  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H)  
TPC8054-H  
Switching Regulator Applications  
Motor Drive Applications  
Unit: mm  
DC-DC Converter Applications  
Small footprint due to a small and thin package  
High-speed switching  
Small gate charge: Q  
= 18 nC (typ.)  
SW  
Low drain-source ON-resistance:  
= 13.3 mΩ (typ.)  
R
DS (ON)  
High forward transfer admittance: |Y | = 38 S (typ.)  
fs  
Low leakage current: I  
= 10 μA (max) (V  
= 100 V)  
DSS  
DS  
Enhancement mode: V = 1.3 to 2.3 V (V  
= 10 V, I = 1.0 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
100  
100  
±20  
10  
V
V
V
DSS  
V
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
DGR  
GS  
V
GSS  
JEDEC  
JEITA  
DC  
(Note 1)  
I
D
Drain current  
A
Pulsed (Note 1)  
I
40  
DP  
Drain power dissipation  
Drain power dissipation  
(t = 10 s)  
(Note 2a)  
TOSHIBA  
2-6J1B  
P
1.9  
1.0  
W
W
D
D
Weight: 0.085g (typ.)  
(t = 10 s)  
(Note 2b)  
P
Single-pulse avalanche energy  
(Note 3)  
E
61  
10  
mJ  
A
AS  
Circuit Configuration  
Avalanche current  
I
AR  
8
7
6
5
Repetitive avalanche energy  
E
0.04  
mJ  
AR  
(Note 2a) (Note 4)  
T
T
150  
°C  
°C  
Channel temperature  
ch  
55 to 150  
Storage temperature range  
stg  
Note: For Notes 1 to 4, refer to the next page.  
1
2
3
4
Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are  
within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba  
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate, etc).  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2009-09-16  

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