生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G8 |
针数: | 8 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.76 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 10 A | 最大漏源导通电阻: | 0.0215 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 190 pF |
JESD-30 代码: | R-PDSO-G8 | 元件数量: | 1 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TPC8054-H(TE12L) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,10A I(D),SO | |
TPC8059-H(TE12L,Q) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,18A I(D),SO | |
TPC8060-H | TOSHIBA |
获取价格 |
TRANSISTOR 18000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, THIN, 2-6J1B, 8 | |
TPC8061-H | UNITPOWER |
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3A Ultra Low Dropout Linear Regulator | |
TPC8061-H | TOSHIBA |
获取价格 |
Silicon N-Channel MOS Type (U-MOSⅥ-H) | |
TPC8061-H(TE12L) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,8A I(D),SO | |
TPC8062-H(TE12L) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,18A I(D),SO | |
TPC8062-H(TE12L,Q) | TOSHIBA |
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TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,18A I(D),SO | |
TPC8063-H | TOSHIBA |
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Bipolar Small-Signal Transistors | |
TPC8063-H(TE12L) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,17A I(D),SO |