是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.76 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 18 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 1.9 W |
子类别: | FET General Purpose Power | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TPC8063-H | TOSHIBA |
获取价格 |
Bipolar Small-Signal Transistors | |
TPC8063-H(TE12L) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,17A I(D),SO | |
TPC8063-H(TE12L,Q) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,17A I(D),SO | |
TPC8064-H | TOSHIBA |
获取价格 |
TRANSISTOR 16000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, THIN, 2-6J | |
TPC8065-H | TOSHIBA |
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MOSFETs Silicon N-Channel MOS (U-MOS-H) | |
TPC8066-H | TOSHIBA |
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TRANSISTOR 11000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, THIN, 2-5R | |
TPC8066-H(TE12L,Q) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,11A I(D),SO | |
TPC8067-H | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,9A I(D),SO | |
TPC8067-H(TE12L) | TOSHIBA |
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TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,9A I(D),SO | |
TPC8073 | TOSHIBA |
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MOSFETs Silicon N-Channel MOS (U-MOS) |