5秒后页面跳转
TPC8062-H(TE12L,Q) PDF预览

TPC8062-H(TE12L,Q)

更新时间: 2024-11-03 08:01:39
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
9页 223K
描述
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,18A I(D),SO

TPC8062-H(TE12L,Q) 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
风险等级:5.76配置:Single
最大漏极电流 (Abs) (ID):18 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1.9 W
子类别:FET General Purpose Power表面贴装:YES
Base Number Matches:1

TPC8062-H(TE12L,Q) 数据手册

 浏览型号TPC8062-H(TE12L,Q)的Datasheet PDF文件第2页浏览型号TPC8062-H(TE12L,Q)的Datasheet PDF文件第3页浏览型号TPC8062-H(TE12L,Q)的Datasheet PDF文件第4页浏览型号TPC8062-H(TE12L,Q)的Datasheet PDF文件第5页浏览型号TPC8062-H(TE12L,Q)的Datasheet PDF文件第6页浏览型号TPC8062-H(TE12L,Q)的Datasheet PDF文件第7页 
TPC8062-H  
MOSFETs Silicon N-Channel MOS (U-MOS-H)  
TPC8062-H  
1. Applications  
High-Efficiency DC-DC Converters  
Notebook PCs  
Mobile Handsets  
2. Features  
(1) Small footprint due to a small and thin package  
(2) High-speed switching  
(3) Small gate change: QSW = 7.4 nC (typ.)  
(4) Low drain-source on-resistance: RDS(ON) = 5.6 m(typ.) (VGS = 4.5 V)  
(5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)  
(6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.3 mA)  
3. Packaging and Internal Circuit  
1, 2, 3: Source  
4: Gate  
5, 6, 7, 8: Drain  
SOP-8  
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)  
Characteristics  
Symbol  
Rating  
Unit  
V
Drain-source voltage  
Gate-source voltage  
Drain current (DC)  
Drain current (pulsed)  
Power dissipation  
VDSS  
VGSS  
ID  
30  
±20  
(Note 1)  
(Note 1)  
(Note 2)  
(Note 3)  
(Note 4)  
18  
A
IDP  
72  
(t = 10 s)  
(t = 10 s)  
PD  
1.9  
W
W
mJ  
A
Power dissipation  
PD  
1.0  
Single-pulse avalanche energy  
Avalanche current  
EAS  
IAR  
210  
18  
Channel temperature  
Storage temperature  
Tch  
Tstg  
150  
-55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
2010-06-10  
Rev.1.0  
1

与TPC8062-H(TE12L,Q)相关器件

型号 品牌 获取价格 描述 数据表
TPC8063-H TOSHIBA

获取价格

Bipolar Small-Signal Transistors
TPC8063-H(TE12L) TOSHIBA

获取价格

TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,17A I(D),SO
TPC8063-H(TE12L,Q) TOSHIBA

获取价格

TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,17A I(D),SO
TPC8064-H TOSHIBA

获取价格

TRANSISTOR 16000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, THIN, 2-6J
TPC8065-H TOSHIBA

获取价格

MOSFETs Silicon N-Channel MOS (U-MOS-H)
TPC8066-H TOSHIBA

获取价格

TRANSISTOR 11000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, THIN, 2-5R
TPC8066-H(TE12L,Q) TOSHIBA

获取价格

TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,11A I(D),SO
TPC8067-H TOSHIBA

获取价格

TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,9A I(D),SO
TPC8067-H(TE12L) TOSHIBA

获取价格

TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,9A I(D),SO
TPC8073 TOSHIBA

获取价格

MOSFETs Silicon N-Channel MOS (U-MOS)