生命周期: | End Of Life | 零件包装代码: | SOT |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | 针数: | 8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.73 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 13 A |
最大漏源导通电阻: | 0.0147 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G8 | 元件数量: | 1 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TPC8066-H | TOSHIBA |
获取价格 |
TRANSISTOR 11000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, THIN, 2-5R | |
TPC8066-H(TE12L,Q) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,11A I(D),SO | |
TPC8067-H | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,9A I(D),SO | |
TPC8067-H(TE12L) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,9A I(D),SO | |
TPC8073 | TOSHIBA |
获取价格 |
MOSFETs Silicon N-Channel MOS (U-MOS) | |
TPC8074 | TOSHIBA |
获取价格 |
MOSFETs Silicon N-Channel MOS (U-MOS) | |
TPC8075 | TOSHIBA |
获取价格 |
TRANSISTOR 18000 mA, 33 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, THIN, 2-6J | |
TPC8075(TE12L) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,33V V(BR)DSS,18A I(D),SO | |
TPC8075(TE12L,Q) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,33V V(BR)DSS,18A I(D),SO | |
TPC8076 | TOSHIBA |
获取价格 |
Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments |