Datasheet > TPC8042(TE12L,Q)

TPC8042(TE12L,Q)

更新时间： 2024-11-02 14:36:23

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	220K
描述
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,18A I(D),SO

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技术参数
数据手册

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TPC8042(TE12L,Q) 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	Is Samacsys：	N
配置：	Single	最大漏极电流 (Abs) (ID)：	18 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	1.9 W	子类别：	FET General Purpose Power
表面贴装：	YES	Base Number Matches：	1

TPC8042(TE12L,Q) 数据手册

TPC8042

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)

TPC8042

Lithium-Ion Battery Applications

Unit: mm

Portable Equipment Applications

Notebook PC Applications

•

Small footprint due to a small and thin package

Low drain-source ON-resistance: R = 2.7 mΩ (typ.)

DS (ON)

High forward transfer admittance: |Y | = 42 S (typ.)

Low leakage current: I

= 10 μA (max) (V

= 30 V)

DSS

Enhancement mode: V = 1.3 to 2.5 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

±20

GSS

(Note 1)

JEDEC

JEITA

⎯

Drain current

Pulse (Note 1)

Drain power dissipation

(t = 10 s)

(Note 2a)

TOSHIBA

2-6J1B

1.9

1.0

Weight: 0.08 g (typ.)

(t = 10 s)

(Note 2b)

Single pulse avalanche energy

(Note 3)

Circuit Configuration

Avalanche current

Repetitive avalanche energy

0.044

(Note 2a) (Note 4)

150

°C

Channel temperature

−55 to 150

Storage temperature range

stg

Note: For Notes 1 to 4, refer to the next page.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.)

are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.

2009-09-29

12 3 4 5 6 7

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与TPC8042(TE12L,Q)相关器件

型号	品牌	获取价格	描述	数据表
TPC8045-H	TOSHIBA	获取价格	Switching Regulator Applications Motor Drive Applications DC-DC Converter Applications
TPC8046-H	TOSHIBA	获取价格	TRANSISTOR 18000 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, THIN, 2-6J
TPC8047-H	TOSHIBA	获取价格	TRANSISTOR 16000 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, THIN, 2-6J
TPC8047-H(TE12L)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,16A I(D),SO
TPC8047-H(TE12L,Q)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,16A I(D),SO
TPC8048-H	TOSHIBA	获取价格	Bipolar Small-Signal Transistors
TPC8048-H(TE12L)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,16A I(D),SO
TPC8048-H(TE12L,Q)	TOSHIBA	获取价格	MOSFET N-CH 60V 16A 8-SOP
TPC8049-H	TOSHIBA	获取价格	Switching Regulator Applications Motor Drive Applications DC-DC Converter Applications
TPC8049-H(TE12L,Q)	TOSHIBA	获取价格	Trans MOSFET N-CH 60V 13A 6-Pin SOP T/R

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