TPC8036-H

更新时间： 2024-11-02 08:40:07

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体小信号场效应晶体管开关光电二极管
页数	文件大小	规格书
7页	219K
描述
Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)

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TPC8036-H 技术参数

生命周期：	End Of Life	包装说明：	SMALL OUTLINE, R-PDSO-G8
针数：	8	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.76
Is Samacsys：	N	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V	最大漏极电流 (Abs) (ID)：	18 A
最大漏极电流 (ID)：	18 A	最大漏源导通电阻：	0.0051 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最大反馈电容 (Crss)：	370 pF
JESD-30 代码：	R-PDSO-G8	元件数量：	1
端子数量：	8	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	1.9 W
认证状态：	Not Qualified	子类别：	FET General Purpose Power
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

TPC8036-H 数据手册

TPC8036-H

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)

TPC8036-H

High Efficiency DC-DC Converter Applications

Notebook PC Applications

Unit: mm

Portable Equipment Applications

•

Small footprint due to a small and thin package

High-speed switching

Small gate charge: Q_SW= 13 nC (typ.)

Low drain-source ON-resistance: R_{DS (ON)}= 3.1 mΩ (typ.)

High forward transfer admittance: |Y_fs| = 64 S (typ.)

Low leakage current: I_DSS= 10 μA (max) (V_DS= 30 V)

Enhancement mode: V_th= 1.3 to 2.3 V (V_DS= 10 V, I_D= 0.5 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Drain-source voltage

Symbol

Rating

Unit

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

±20

GSS

JEDEC

JEITA

―

(Note 1)

Drain current

Pulsed (Note 1)

TOSHIBA

2-6J1B

Drain power dissipation

(t = 10 s)

(Note 2a)

(t = 10 s)

(Note 2b)

1.9

1.0

Weight: 0.085 g (typ.)

Circuit Configuration

Single pulse avalanche energy

(Note 3)

211

Avalanche current

Repetitive avalanche energy

0.13

(Note 2a) (Note 4)

150

°C

Channel temperature

−55 to 150

Storage temperature range

stg

Note: For Notes 1 to 4, refer to the next page.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating

Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.

2008-09-16

12 3 4 5 6 7

中文翻译

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与TPC8036-H相关器件

型号	品牌	获取价格	描述	数据表
TPC8037-H	TOSHIBA	获取价格	High-Efficiency DC-DC Converter Applications Notebook PC Applications
TPC8037-H(TE12L	TOSHIBA	获取价格	Small Signal Field-Effect Transistor
TPC8038-H	TOSHIBA	获取价格	TRANSISTOR 12000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, THIN, 2-6J1B, 8
TPC8038-H(TE12L,Q)	TOSHIBA	获取价格	MOSFET N-CH 30V 12A SOP8 2-6J1B
TPC8039-H	TOSHIBA	获取价格	Field Effect Transistor Silicon N-Channel MOS
TPC8040-H	TOSHIBA	获取价格	Field Effect Transistor Silicon N-Channel MOS
TPC8041	TOSHIBA	获取价格	Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)
TPC8042	TOSHIBA	获取价格	Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)
TPC8042(TE12L)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,18A I(D),SO
TPC8042(TE12L,Q)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,18A I(D),SO

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