5秒后页面跳转
TPC8014 PDF预览

TPC8014

更新时间: 2024-11-01 21:53:19
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体晶体管场效应晶体管
页数 文件大小 规格书
7页 214K
描述
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

TPC8014 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:2-6J1B, 8 PIN针数:8
Reach Compliance Code:unknown风险等级:5.73
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):11 A最大漏源导通电阻:0.022 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

TPC8014 数据手册

 浏览型号TPC8014的Datasheet PDF文件第2页浏览型号TPC8014的Datasheet PDF文件第3页浏览型号TPC8014的Datasheet PDF文件第4页浏览型号TPC8014的Datasheet PDF文件第5页浏览型号TPC8014的Datasheet PDF文件第6页浏览型号TPC8014的Datasheet PDF文件第7页 
TPC8014  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)  
TPC8014  
Lithium Ion Battery Applications  
Unit: mm  
Portable Equipment Applications  
Notebook PC Applications  
Small footprint due to small and thin package  
Low drain-source ON resistance: R = 11 m(typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 10 S (typ.)  
fs  
Low leakage current: I  
= 10 µA (max) (V = 30 V)  
DS  
DSS  
Enhancement mode: V = 1.3 to 2.5 V (V  
= 10 V, I = 1 mA)  
D
th DS  
Maximum Ratings  
(Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
30  
30  
V
V
V
DSS  
Drain-gate voltage (R  
= 20 k)  
V
DGR  
GS  
V
±20  
11  
Gate-source voltage  
GSS  
DC  
(Note 1)  
I
D
Drain current  
A
JEDEC  
JEITA  
Pulse (Note 1)  
I
44  
DP  
Drain power dissipation  
Drain power dissipation  
(t = 10 s)  
(Note 2a)  
(t = 10 s)  
(Note 2b)  
P
1.9  
1.0  
W
W
D
D
TOSHIBA  
2-6J1B  
Weight: 0.08 g (typ.)  
P
Single pulse avalanche energy  
(Note 3)  
E
157  
11  
mJ  
A
AS  
Circuit Configuration  
Avalanche current  
I
AR  
8
7
6
5
Repetitive avalanche energy  
E
0.19  
mJ  
AR  
(Note 2a) (Note 4)  
T
150  
°C  
°C  
Channel temperature  
ch  
Storage temperature range  
T
stg  
55 to 150  
Note 1, Note 2, Note 3 and Note 4: See the next page.  
This transistor is an electrostatic-sensitive device. Please handle with  
caution.  
1
2
3
4
1
2004-07-06  

与TPC8014相关器件

型号 品牌 获取价格 描述 数据表
TPC8014_07 TOSHIBA

获取价格

Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications
TPC8015-H ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 13A I(D) | SO
TPC8016-H TOSHIBA

获取价格

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III)
TPC8017-H TOSHIBA

获取价格

High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipmen
TPC8017-H_06 TOSHIBA

获取价格

High-Effciency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Ap
TPC8018-H TOSHIBA

获取价格

High-Speed and High-Effciency DC/DC Converter Applications Notebook PC Applications Portab
TPC8020-H TOSHIBA

获取价格

Field Effect Transistor Silicon N Channel MOS Type (Ultra High-Speed U-MOSIII)
TPC8020-H(TE12L,Q) TOSHIBA

获取价格

MOSFET N-CH 30V 13A SOP8 2-6J1B
TPC8020-H_06 TOSHIBA

获取价格

Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPC8021-H TOSHIBA

获取价格

High-Efficiency DC/DC Converter Applications