是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | 2-6J1B, 8 PIN | 针数: | 8 |
Reach Compliance Code: | unknown | 风险等级: | 5.73 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 11 A | 最大漏源导通电阻: | 0.022 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
元件数量: | 1 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
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TPC8014_07 | TOSHIBA |
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High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipmen | |
TPC8017-H_06 | TOSHIBA |
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High-Effciency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Ap | |
TPC8018-H | TOSHIBA |
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High-Speed and High-Effciency DC/DC Converter Applications Notebook PC Applications Portab | |
TPC8020-H | TOSHIBA |
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Field Effect Transistor Silicon N Channel MOS Type (Ultra High-Speed U-MOSIII) | |
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MOSFET N-CH 30V 13A SOP8 2-6J1B | |
TPC8020-H_06 | TOSHIBA |
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Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) | |
TPC8021-H | TOSHIBA |
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High-Efficiency DC/DC Converter Applications |