Datasheet > TPC8030

TPC8030

更新时间： 2024-11-02 05:52:43

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管场效应晶体管
页数	文件大小	规格书
7页	223K
描述
Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)

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技术参数
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TPC8030 技术参数

生命周期：	Transferred	包装说明：	ROHS COMPLIANT, THIN, 2-6J1B, 8 PIN
针数：	8	Reach Compliance Code：	unknown
风险等级：	5.37	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V	最大漏极电流 (ID)：	11 A
最大漏源导通电阻：	0.017 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G8	元件数量：	1
端子数量：	8	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

TPC8030 数据手册

TPC8030

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)

TPC8030

Lithium Ion Battery Applications

Unit: mm

Portable Equipment Applications

Notebook PC Applications

•

Small footprint due to small and thin package

Low drain-source ON-resistance: R = 7.5 mΩ (typ.)

DS (ON)

High forward transfer admittance: |Y | = 26 S (typ.)

Low leakage current: I

= 10 μA (max) (V

= 30 V)

DSS

Enhancement mode: V = 1.3 to 2.5 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

± 25

GSS

JEDEC

JEITA

―

(Note 1)

Drain current

Pulse (Note 1)

TOSHIBA

2-6J1B

Drain power dissipation

(t = 10 s)

(Note 2a)

(t = 10 s)

(Note 2b)

1.9

1.0

Weight: 0.080 g (typ.)

Circuit Configuration

Single pulse avalanche energy

(Note 3)

Avalanche current

Repetitive avalanche energy

0.053

(Note 2a) (Note 4)

150

°C

Channel temperature

−55 to 150

Storage temperature range

stg

Note: Note 1, Note 2, Note 3 and Note 4: See the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.

2009-09-29

12 3 4 5 6 7

中文翻译

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与TPC8030相关器件

型号	品牌	获取价格	描述	数据表
TPC8031-H	TOSHIBA	获取价格	TRANSISTOR 11000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, THIN, 2-6J1B, 8
TPC8032-H	TOSHIBA	获取价格	TRANSISTOR 15000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, THIN, 2-6J1B, 8
TPC8033-H	TOSHIBA	获取价格	TRANSISTOR 17 A, 30 V, 0.0072 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, 2-6J1B, 8 PIN, F
TPC8034-H	TOSHIBA	获取价格	TRANSISTOR 20 A, 30 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, 2-6J1B, 8 PIN, F
TPC8035-H	TOSHIBA	获取价格	Field Effect Transistor Silicon N-Channel MOS
TPC8036-H	TOSHIBA	获取价格	Field Effect Transistor Silicon N-Channel MOS
TPC8037-H	TOSHIBA	获取价格	High-Efficiency DC-DC Converter Applications Notebook PC Applications
TPC8037-H(TE12L	TOSHIBA	获取价格	Small Signal Field-Effect Transistor
TPC8038-H	TOSHIBA	获取价格	TRANSISTOR 12000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, THIN, 2-6J1B, 8
TPC8038-H(TE12L,Q)	TOSHIBA	获取价格	MOSFET N-CH 30V 12A SOP8 2-6J1B

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