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TPC8031-H

更新时间： 2024-11-02 20:01:27
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
7页 244K
描述
TRANSISTOR 11000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, THIN, 2-6J1B, 8 PIN, FET General Purpose Small Signal

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中文翻译

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TPC8031-H 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-G8
针数：8Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.82
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (Abs) (ID)：11 A最大漏极电流 (ID)：11 A
最大漏源导通电阻：0.0161 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：125 pFJESD-30 代码：R-PDSO-G8
元件数量：1端子数量：8
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：1.9 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子形式：GULL WING端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

TPC8031-H 数据手册

 浏览型号TPC8031-H的Datasheet PDF文件第2页浏览型号TPC8031-H的Datasheet PDF文件第3页浏览型号TPC8031-H的Datasheet PDF文件第4页浏览型号TPC8031-H的Datasheet PDF文件第5页浏览型号TPC8031-H的Datasheet PDF文件第6页浏览型号TPC8031-H的Datasheet PDF文件第7页 
TPC8031-H  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H)  
TPC8031-H  
High-Efficiency DC/DC Converter Applications  
Unit: mm  
Notebook PC Applications  
Portable Equipment Applications  
•
•
•
•
•
•
•
Small footprint due to a small and thin package  
High-speed switching  
Small gate charge: Q  
= 5.0 nC (typ.)  
SW  
Low drain-source ON-resistance: R  
= 10.1 mΩ (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 33 S (typ.)  
fs  
Low leakage current: I  
= 10 μA (max) (V  
= 30 V)  
DSS  
DS  
Enhancement mode: V = 1.5 to 2.5 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
30  
30  
V
V
V
DSS  
V
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
DGR  
GS  
JEDEC  
JEITA  
―
―
V
±20  
11  
GSS  
DC  
(Note 1)  
I
D
Drain current  
A
TOSHIBA  
2-6J1B  
Pulsed (Note 1)  
I
44  
DP  
Weight: 0.085 g (typ.)  
Drain power dissipation  
Drain power dissipation  
(t = 10 s)  
(Note 2a)  
(t = 10 s)  
(Note 2b)  
P
1.9  
1.0  
W
W
D
D
P
Circuit Configuration  
Single-pulse avalanche energy  
(Note 3)  
8
7
6
5
E
79  
11  
mJ  
A
AS  
Avalanche current  
I
AR  
Repetitive avalanche energy  
E
0.16  
mJ  
AR  
(Note 2a) (Note 4)  
T
T
150  
°C  
°C  
Channel temperature  
ch  
−55 to 150  
Storage temperature range  
stg  
1
2
3
4
Note: For Notes 1 to 4, refer to the next page.  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and  
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2007-12-25  
1234567

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