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TPC8026

更新时间： 2024-02-10 16:05:11
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
7页 204K
描述
TRANSISTOR 13000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, 2-6J1B, 8 PIN, FET General Purpose Small Signal

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中文翻译

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TPC8026 技术参数

生命周期：Transferred包装说明：ROHS COMPLIANT, THIN, 2-6J1B, 8 PIN
针数：8Reach Compliance Code：unknown
风险等级：5.37配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏极电流 (ID)：13 A
最大漏源导通电阻：0.01 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G8元件数量：1
端子数量：8工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：YES
端子形式：GULL WING端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

TPC8026 数据手册

 浏览型号TPC8026的Datasheet PDF文件第2页浏览型号TPC8026的Datasheet PDF文件第3页浏览型号TPC8026的Datasheet PDF文件第4页浏览型号TPC8026的Datasheet PDF文件第5页浏览型号TPC8026的Datasheet PDF文件第6页浏览型号TPC8026的Datasheet PDF文件第7页 
TPC8026  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)  
TPC8026  
Lithium Ion Battery Applications  
Unit: mm  
Portable Equipment Applications  
Notebook PC Applications  
•
•
•
•
•
Small footprint due to small and thin package  
Low drain-source ON resistance: R = 5.1 mΩ (typ.)  
DS (ON)  
High forward transfer admittance: |Y | = 30 S (typ.)  
fs  
Low leakage current: I  
= 10 μA (max) (V  
= 30 V)  
DSS  
DS  
Enhancement mode: V = 1.3 to 2.5 V (V  
= 10 V, I = 1 mA)  
D
th  
DS  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
30  
30  
V
V
V
DSS  
V
Drain-gate voltage (R  
Gate-source voltage  
= 20 kΩ)  
DGR  
GS  
V
±20  
13  
GSS  
JEDEC  
JEITA  
―
―
DC  
(Note 1)  
I
D
Drain current  
A
Pulse (Note 1)  
I
52  
DP  
Drain power dissipation  
Drain power dissipation  
(t = 10 s)  
(Note 2a)  
(t = 10 s)  
(Note 2b)  
TOSHIBA  
2-6J1B  
P
1.9  
1.0  
W
W
D
D
Weight: 0.08 g (typ.)  
P
Circuit Configuration  
Single pulse avalanche energy  
(Note 3)  
E
44  
13  
mJ  
A
8
7
6
5
AS  
Avalanche current  
I
AR  
Repetitive avalanche energy  
E
0.048  
mJ  
AR  
(Note 2a) (Note 4)  
T
T
150  
°C  
°C  
Channel temperature  
ch  
−55 to 150  
Storage temperature range  
stg  
1
2
3
4
Note 1, Note 2, Note 3 and Note 4: See the next page.  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant  
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated  
failure rate, etc).  
This transistor is an electrostatic-sensitive device. Please handle with caution.  
1
2007-02-15  
1234567

中文翻译

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TPC8026 替代型号

型号 品牌 替代类型 描述 数据表
SI4406DY-T1-E3 VISHAY

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