Datasheet > TPC8027(TE12L)

TPC8027(TE12L)

更新时间： 2024-02-22 05:57:22

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	201K
描述
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,18A I(D),SO

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

TPC8027(TE12L) 技术参数

是否Rohs认证：	不符合	生命周期：	Lifetime Buy
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	配置：	Single
最大漏极电流 (Abs) (ID)：	18 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	1.9 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

TPC8027(TE12L) 数据手册

TPC8027

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)

TPC8027

Lithium Ion Battery Applications

Unit: mm

Portable Equipment Applications

Notebook PC Applications

•

Small footprint due to small and thin package

Low drain-source ON resistance: R = 2.1 mΩ (typ.)

DS (ON)

High forward transfer admittance: |Y | = 48 S (typ.)

Low leakage current: I

= 10 μA (max) (V

= 30 V)

DSS

Enhancement mode: V = 1.3 to 2.5 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

±20

GSS

JEDEC

JEITA

―

(Note 1)

Drain current

Pulse (Note 1)

TOSHIBA

2-6J1B

Drain power dissipation

(t = 10 s)

(Note 2a)

1.9

1.0

Weight: 0.08 g (typ.)

(t = 10 s)

(Note 2b)

Circuit Configuration

Single pulse avalanche energy

(Note 3)

Avalanche current

Repetitive avalanche energy

0.029

(Note 2a) (Note 4)

150

°C

Channel temperature

−55 to 150

Storage temperature range

stg

Note 1, Note 2, Note 3 and Note 4: See the next page.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in

the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within

the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated

failure rate, etc).

This transistor is an electrostatic-sensitive device. Please handle with caution.

2009-09-29

12 3 4 5 6 7

中文翻译

下载PDF

与TPC8027(TE12L)相关器件

型号	品牌	获取价格	描述	数据表
TPC8028	TOSHIBA	获取价格	lithium-ion secondary battery Notebook PC Portable electronic equipment
TPC8029	TOSHIBA	获取价格	Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)
TPC8030	TOSHIBA	获取价格	Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)
TPC8031-H	TOSHIBA	获取价格	TRANSISTOR 11000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, THIN, 2-6J1B, 8
TPC8032-H	TOSHIBA	获取价格	TRANSISTOR 15000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, THIN, 2-6J1B, 8
TPC8033-H	TOSHIBA	获取价格	TRANSISTOR 17 A, 30 V, 0.0072 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, 2-6J1B, 8 PIN, F
TPC8034-H	TOSHIBA	获取价格	TRANSISTOR 20 A, 30 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, 2-6J1B, 8 PIN, F
TPC8035-H	TOSHIBA	获取价格	Field Effect Transistor Silicon N-Channel MOS
TPC8036-H	TOSHIBA	获取价格	Field Effect Transistor Silicon N-Channel MOS
TPC8037-H	TOSHIBA	获取价格	High-Efficiency DC-DC Converter Applications Notebook PC Applications

与TPC8027(TE12L)相关文章

MBRS340T3G手册解读：参数说明、产品特性及应用
2024-06-28

7
PMOS管背靠背连接：串联还是并联？
2024-06-28

7
高压电解电容的分类与选型策略
2024-06-28

8
数码管：基本概念、分类、技术发展及市场趋势
2024-06-27

14

产品中心

服务支持

精选活动

关于我们

帮助中心

TPC8027(TE12L)

TPC8027(TE12L) 技术参数

TPC8027(TE12L) 数据手册

与TPC8027(TE12L)相关器件

与TPC8027(TE12L)相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

TPC8027(TE12L)

TPC8027(TE12L) 技术参数

TPC8027(TE12L) 数据手册

与TPC8027(TE12L)相关器件

与TPC8027(TE12L)相关文章

您还可以找

您在本页遇到什么问题？