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TPC8022-H PDF预览

TPC8022-H

更新时间： 2024-02-28 06:31:37
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体转换器小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
7页 326K
描述
High-Efficiency DC/DC Converter Applications

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中文翻译

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TPC8022-H 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-G8
针数：8Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.81
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：40 V
最大漏极电流 (Abs) (ID)：7.5 A最大漏极电流 (ID)：7.5 A
最大漏源导通电阻：0.035 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G8JESD-609代码：e0
元件数量：1端子数量：8
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：1.9 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：TIN LEAD端子形式：GULL WING
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

TPC8022-H 数据手册

 浏览型号TPC8022-H的Datasheet PDF文件第2页浏览型号TPC8022-H的Datasheet PDF文件第3页浏览型号TPC8022-H的Datasheet PDF文件第4页浏览型号TPC8022-H的Datasheet PDF文件第5页浏览型号TPC8022-H的Datasheet PDF文件第6页浏览型号TPC8022-H的Datasheet PDF文件第7页 
TPC8022-H  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U−MOS III)  
TPC8022-H  
High-Efficiency DC/DC Converter Applications  
Unit: mm  
Notebook PC Applications  
Portable-Equipment Applications  
CCFL Inverter Applications  
z
z
z
z
z
z
z
Small footprint due to a small and thin package  
High speed switching  
Small gate charge: Q  
SW  
= 3.5 nC (typ.)  
Low drain−source ON-resistance: R  
DS (ON)  
= 22 mΩ (typ.)  
High forward transfer admittance: |Y | = 15 S (typ.)  
fs  
Low leakage current: I  
= 10 µA (max) (V  
= 40 V)  
DSS  
DS  
Enhancement mode: V = 1.1 to 2.3 V (V  
= 10 V, I = 1 mA)  
th DS  
D
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
40  
40  
V
V
V
DSS  
JEDEC  
JEITA  
―
―
Drain-gate voltage (R  
= 20 kΩ)  
V
DGR  
GS  
Gate-source voltage  
V
±20  
7.5  
30  
GSS  
TOSHIBA  
2-6J1B  
D C  
(Note 1)  
I
D
Drain current  
A
Weight: 0.085 g (typ.)  
Pulse  
(Note 1)  
(Note 2a)  
(Note 2b)  
I
DP  
Drain power dissipation  
(t = 10 s)  
P
1.9  
1.0  
W
W
D
D
Circuit Configuration  
Drain power dissipation  
(t = 10 s)  
P
Single-pulse avalanche energy  
(Note 3)  
8
7
6
5
E
26  
mJ  
A
AS  
Avalanche current  
I
7.5  
AR  
Repetitive avalanche energy  
Single-device value at dual operation  
(Note 2a, 4)  
E
0.08  
mJ  
AR  
Channel temperature  
T
T
150  
°C  
°C  
ch  
Storage temperature range  
−55 to 150  
1
2
3
4
stg  
Note: For Notes 1 to 4, refer to the next page.  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2006-11-17  
1234567

中文翻译

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