Datasheet > TPC8020-H(TE12L,Q)

TPC8020-H(TE12L,Q)

更新时间： 2024-01-21 17:54:01

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	230K
描述
MOSFET N-CH 30V 13A SOP8 2-6J1B

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TPC8020-H(TE12L,Q) 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.74
Is Samacsys：	N	Base Number Matches：	1

TPC8020-H(TE12L,Q) 数据手册

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TPC8020-H

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)

TPC8020-H

High-Efficiency DC/DC Converter Applications

Unit: mm

Notebook PC Applications

Portable Equipment Applications

•

Small footprint due to a small and thin package

High-speed switching

Small gate charge: Q

= 6.9 nC (typ.)

Low drain-source ON- resistance: R

= 6.8 mΩ (typ.)

DS (ON)

High forward transfer admittance: |Y | =32 S (typ.)

Low leakage current: I

= 10 μA (max) (V

= 30 V)

DSS

Enhancement mode: V = 1.1 to 2.3 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Drain-source voltage

Symbol

Rating

Unit

JEDEC

JEITA

―

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

TOSHIBA

2-6J1B

±20

GSS

(Note 1)

Weight: 0.085 g (typ.)

Drain current

Pulsed (Note 1)

Drain power dissipation

(t = 10 s)

(Note 2a)

(t = 10 s)

(Note 2b)

1.9

1.0

Circuit Configuration

Single-pulse avalanche energy

(Note 3)

110

Avalanche current

Repetitive avalanche energy

0.084

(Note 2a) (Note 4)

150

°C

Channel temperature

−55 to 150

Storage temperature range

stg

Note: For Notes 1 to 4, refer to the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.

2006-11-16

12 3 4 5 6 7

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与TPC8020-H(TE12L,Q)相关器件

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