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TPC8020-H_06 PDF预览

TPC8020-H_06

更新时间： 2024-11-25 05:53:15
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体晶体管场效应晶体管
页数 文件大小 规格书
7页 453K
描述
Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)

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TPC8020-H_06 数据手册

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TPC8020-H  
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)  
TPC8020-H  
High-Efficiency DC/DC Converter Applications  
Unit: mm  
Notebook PC Applications  
Portable Equipment Applications  
•
•
•
•
•
•
•
Small footprint due to a small and thin package  
High-speed switching  
Small gate charge: Q  
= 6.9 nC (typ.)  
Low drain-source ON- resistance: R  
SW  
= 6.8 mΩ (typ.)  
DS (ON)  
High forward transfer admittance: |Y | =32 S (typ.)  
fs  
Low leakage current: I  
= 10 µA (max) (V  
= 30 V)  
DSS  
DS  
Enhancement mode: V = 1.1 to 2.3 V (V  
= 10 V, I = 1 mA)  
th DS  
D
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Drain-source voltage  
Symbol  
Rating  
Unit  
JEDEC  
JEITA  
―
―
V
30  
30  
V
V
V
DSS  
V
DGR  
Drain-gate voltage (R  
= 20 kΩ)  
GS  
TOSHIBA  
2-6J1B  
V
±20  
13  
Gate-source voltage  
GSS  
DC  
(Note 1)  
I
Weight: 0.085 g (typ.)  
D
Drain current  
A
Pulsed (Note 1)  
I
52  
DP  
Drain power dissipation  
Drain power dissipation  
(t = 10 s)  
(Note 2a)  
(t = 10 s)  
(Note 2b)  
P
1.9  
1.0  
W
W
D
D
Circuit Configuration  
P
8
7
6
5
Single-pulse avalanche energy  
(Note 3)  
E
110  
13  
mJ  
A
AS  
Avalanche current  
I
AR  
Repetitive avalanche energy  
E
0.084  
mJ  
AR  
(Note 2a) (Note 4)  
T
T
150  
°C  
°C  
Channel temperature  
ch  
1
2
3
4
−55 to 150  
Storage temperature range  
stg  
Note: For Notes 1 to 4, refer to the next page.  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and  
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
This transistor is an electrostatic-sensitive device. Handle with care.  
1
2006-11-16  
1234567

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