Datasheet > TN5325

TN5325

更新时间： 2024-11-07 22:19:27

品牌	Logo	应用领域
超科 - SUPERTEX		射频微波
页数	文件大小	规格书
2页	448K
描述
N-Channel Enhancement-Mode Vertical DMOS FETs

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TN5325 数据手册

TN5325

Low Threshold

N-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Product marking for SOT-23:

N3C❋

Order Number / Package

BV_DSS

R_DS(ON)

V_GS(th)

I_D(on)

BV_DGS

(max)

(min)

TO-236AB*

TO-92

TO-243AA**

where ❋ = 2-week alpha date code

250V

7.0Ω

2.0V

1.2A

TN5325K1

TN5325N3

TN5325N8

Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

** Shipped on 2,000 piece carrier tape and reels.

Product marking for TO-243AA

Features

TN3C❋

Where❋=2-weekalphadatecode

❏

Low threshold – 2.0V max.

Free from secondary breakdown

Low power drive requirement

Low C_ISSand fast switching speeds

Excellent thermal stability

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces devices with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, these

devices are free from thermal runaway and thermally-induced

secondary breakdown.

High input impedance and high gain

Complementary N- and P-channel devices

Applications

❏

Logic level interfaces – ideal for TTL and CMOS

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Solid state relays

Battery operated systems

Photo voltaic drives

Analog switches

General purpose line drivers

Telecom switches

Package Options

Absolute Maximum Ratings

Drain-to-Source Voltage

BV_DSS

Drain-to-Gate Voltage

BV_DGS

S G

Gate-to-Source Voltage

± 20V

TO-243AA

(SOT-89)

TO-236AB

(SOT-23)

TO-92

Operating and Storage Temperature

Soldering Temperature*

-55°C to +150°C

300°C

Note: See Package Outline section for dimensions.

* Distance of 1.6 mm from case for 10 seconds.

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

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与TN5325相关器件

型号	品牌	获取价格	描述	数据表
TN5325K1	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
TN5325K1-G	MICROCHIP	获取价格	150mA, 250V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
TN5325K1-G	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.15A I(D), 250V, 1-Element, N-Channel, Silicon, Met
TN5325K1GP002	MICROCHIP	获取价格	N-Channel Enhancement-Mode Vertical DMOS FET
TN5325N3	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
TN5325N3-G	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.215A I(D), 250V, 1-Element, N-Channel, Silicon, Me
TN5325N3-G	MICROCHIP	获取价格	215mA, 250V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
TN5325N3GP002	MICROCHIP	获取价格	N-Channel Enhancement-Mode Vertical DMOS FET
TN5325N3-G-P002	MICROCHIP	获取价格	MOSFET N-CH 250V 0.215A TO92-3
TN5325N8	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs

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