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Datasheet > TC55VCM216ASGN40
TC55VCM216ASGN40 PDF预览

TC55VCM216ASGN40

更新时间： 2024-09-19 21:06:27
品牌 Logo 应用领域
东芝 - TOSHIBA 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
14页 139K
描述
IC 256K X 16 STANDARD SRAM, 55 ns, PDSO48, 12 X 14 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48, Static RAM

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中文翻译

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TC55VCM216ASGN40 技术参数

生命周期：Obsolete零件包装代码：TSOP1
包装说明：TSOP1, TSSOP48,.55,20针数：48
Reach Compliance Code：unknownECCN代码：3A991.B.2.A
HTS代码：8542.32.00.41风险等级：5.83
最长访问时间：55 nsI/O 类型：COMMON
JESD-30 代码：R-PDSO-G48长度：12.4 mm
内存密度：4194304 bit内存集成电路类型：STANDARD SRAM
内存宽度：16功能数量：1
端子数量：48字数：262144 words
字数代码：256000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：256KX16输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：TSOP1
封装等效代码：TSSOP48,.55,20封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE并行/串行：PARALLEL
电源：2.5/3.3 V认证状态：Not Qualified
座面最大高度：1.2 mm最小待机电流：1.5 V
子类别：SRAMs最大压摆率：0.035 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.3 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：GULL WING端子节距：0.5 mm
端子位置：DUAL宽度：12 mm
Base Number Matches：1

TC55VCM216ASGN40 数据手册

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TC55VCM216ASGN40,55  
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS  
Lead-Free  
262,144-WORD BY 16-BIT FULL CMOS STATIC RAM  
DESCRIPTION  
The TC55VCM216ASGN is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by  
16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to  
3.6 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of  
3 mA/MHz and a minimum cycle time of 40 ns. It is automatically placed in low-power mode at 0.7 µA standby  
current (at VDD = 3 V, Ta = 25°C, typical) when chip enable ( CE1 ) is asserted high or (CE2) is asserted low. There  
are three control inputs. CE1 and CE2 are used to select the device and for data retention control, and output  
enable ( OE ) provides fast memory access. Data byte control pin ( LB , UB ) provides lower and upper byte access.  
This device is well suited to various microprocessor system applications where high speed, low power and battery  
backup are required. And, with a guaranteed operating extreme temperature range of −40° to 85°C, the  
TC55VCM216ASGN can be used in environments exhibiting extreme temperature conditions. The  
TC55VCM216ASGN is available in a plastic 48-pin thin-small-outline package (TSOP).  
FEATURES  
•
Access Times (maximum):  
•
Low-power dissipation  
Operating: 9 mW/MHz (typical)  
TC55VCM216ASGN  
•
•
•
•
•
•
Single power supply voltage of 2.3 to 3.6 V  
Power down features usingCE1 and CE2  
Data retention supply voltage of 1.5 to 3.6 V  
Direct TTL compatibility for all inputs and outputs  
Wide operating temperature range of −40° to 85°C  
Standby Current (maximum):  
40  
55  
Access Time  
40 ns  
40 ns  
40 ns  
25 ns  
55 ns  
55 ns  
55 ns  
30 ns  
CE1 Access Time  
CE2 Access Time  
OE Access Time  
3.6 V  
3.0 V  
10 µA  
5 µA  
•
•
Package:  
TSOPⅠ48-P-1214-0.50  
Lead-Free  
(Weight:0.35 g typ)  
PIN ASSIGNMENT (TOP VIEW)  
PIN NAMES  
48 PIN TSOP  
A0~A17  
CE1 , CE2  
R/W  
Address Inputs  
Chip Enable  
1
48  
25  
Read/Write Control  
Output Enable  
OE  
LB , UB  
Data Byte Control  
I/O1~I/O16 Data Inputs/Outputs  
V
Power  
DD  
24  
GND  
NC  
Ground  
(Normal)  
No Connection  
Option  
OP*  
*: OP pin must be open or connected to GND.  
Pin No.  
Pin Name  
Pin No.  
1
2
3
4
5
6
7
8
9
10  
NC R/W CE2 OP  
26 27 28 29  
CE1 GND OE  
42 43 44  
11  
12  
13  
14  
UB  
30  
15  
LB  
31  
16  
NC  
32  
A15 A14 A13 A12 A11 A10  
A9  
23  
A2  
39  
A8  
24  
A1  
40  
NC  
25  
A0  
41  
17  
A17  
33  
18  
A7  
34  
19  
A6  
35  
20  
A5  
36  
21  
A4  
37  
22  
A3  
38  
Pin Name  
Pin No.  
I/O1 I/O9 I/O2 I/O10  
45  
46  
47  
48  
Pin Name  
I/O3 I/O11 I/O4 I/O12  
V
DD  
I/O5 I/O13 I/O6 I/O14 I/O7 I/O15 I/O8 I/O16 GND NC  
A16  
2003-07-11 1/14  
1234567...14

中文翻译

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与TC55VCM216ASGN40相关器件

型号 品牌 获取价格 描述 数据表
TC55VCM216ASGN55 TOSHIBA

获取价格

 		IC 256K X 16 STANDARD SRAM, 70 ns, PDSO48, 12 X 14 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC,
TC55VCM216ASTN40 TOSHIBA

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 		TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55VCM216ASTN55 TOSHIBA

获取价格

 		TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55VCM316BSGN40 TOSHIBA

获取价格

 		IC 512K X 16 STANDARD SRAM, 55 ns, PDSO48, 12 X 14 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC,
TC55VCM316BSGN45 TOSHIBA

获取价格

 		IC 512K X 16 STANDARD SRAM, 55 ns, PDSO48, 12 X 14 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC,
TC55VCM316BSGN55 TOSHIBA

获取价格

 		IC 512K X 16 STANDARD SRAM, 70 ns, PDSO48, 12 X 14 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC,
TC55VCM316BTGN40 TOSHIBA

获取价格

 		IC 512K X 16 STANDARD SRAM, 55 ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC,
TC55VCM316BTGN45 TOSHIBA

获取价格

 		IC 512K X 16 STANDARD SRAM, 55 ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC,
TC55VCM316BTGN55 TOSHIBA

获取价格

 		IC 512K X 16 STANDARD SRAM, 70 ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC,
TC55VCM416BSGN TOSHIBA

获取价格

 		1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM

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