Datasheet > TC55VCM416BTGN

TC55VCM416BTGN

更新时间： 2024-11-08 12:05:47

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
18页	238K
描述
1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM

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中文翻译

获取价格

数据手册

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TC55VCM416BTGN 数据手册

TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55

TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Lead-Free

1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM

DESCRIPTION

The TC55VCM416B, TC55VEM416B, TC55YCM416B and TC55YEM416B is a 16,777,216-bit static random

access memory (SRAM) organized as 1,048,576 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate

process technology, this device operates from a single 2.3 to 3.6 V/1.65 to 2.2 V power supply. Advanced circuit

technology provides both high speed and low power at an operating current of 2 mA/MHz and a minimum cycle

time of 55 ns. It is automatically placed in low-power mode at 0.7 μA standby current (at V_DD= 3 V, Ta = 25°C,

typical) when chip enable (CE1 ) is asserted high or (CE2) is asserted low. There are three control inputs. CE1

and CE2 are used to select the device and for data retention control, and output enable (OE ) provides fast memory

access. Data byte control pin ( LB , UB ) provides lower and upper byte access. This device is well suited to various

microprocessor system applications where high speed, low power and battery backup are required. And, with a

guaranteed operating extreme temperature range of −40° to 85°C, the TC55VCM416B, TC55VEM416B,

TC55YCM416B and TC55YEM416B can be used in environments exhibiting extreme temperature conditions. The

TC55VCM416BTGN/BSGN, TC55YCM416BTGN/BSGN is available in a plastic 48-pin thin-small-outline package

(TSOP). The TC55VEM416BXGN, TC55YEM416BXGN is available in a plastic 48-ball BGA.

FEATURES

•

Low-power dissipation

Operating: 6 mW/MHz (typical)

Power down features usingCE1 and CE2

Wide operating temperature range of −40° to 85°C

Lead-Free

•

Access time

(MAX)

Supply Current

Operating

Supply

Voltage

At Data

Retention

Part Number

Package

Supply

Voltage

Operating Standby

2.7~3.6 V

2.3~3.6 V

(MAX)

20 mA

(MAX)

48-pin Plastic TSOP(I)

(12×20mm) (0.5mm pin pitch)

(Normal bent)

TC55VCM416BTGN55

TC55VCM416BSGN55

TC55VEM416BXGN55

55 ns

70 ns

48-pin Plastic TSOP(I)

2.3~3.6 V (12×14mm) (0.5mm pin pitch)

15 μA

1.5~3.6 V

(Normal bent)

48-ball BGA

(8×11mm) (0.75mm ball pitch)

Access time

(MAX)

Supply Current

Operating

Supply

Voltage

At Data

Retention

Part Number

Package

Supply

Voltage

Operating Standby

1.8~2.2 V

1.65~2.2 V

(MAX)

15 mA

(MAX)

48-pin Plastic TSOP(I)

(12×20mm) (0.5mm pin pitch)

(Normal bent)

TC55YCM416BTGN70

TC55YCM416BSGN70

TC55YEM416BXGN70

70 ns

85 ns

48-pin Plastic TSOP(I)

1.65~2.2 V (12×14mm) (0.5mm pin pitch)

15 μA

1.0~2.2 V

70 ns

(Normal bent)

48-ball BGA

(8×11mm) (0.75mm ball pitch)

2005-08-09 1/18

12 3 4 5 6 7...18

中文翻译

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与TC55VCM416BTGN相关器件

型号	品牌	获取价格	描述	数据表
TC55VCM416BTGN55	TOSHIBA	获取价格	1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM
TC55VCM416BTGN55LB	TOSHIBA	获取价格	暂无描述
TC55VD1618FF-133	TOSHIBA	获取价格	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55VD1618FF-150	TOSHIBA	获取价格	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55VD1618FF-167	TOSHIBA	获取价格	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55VD1618FFI-133	TOSHIBA	获取价格	IC 1M X 18 ZBT SRAM, 4.2 ns, PQFP100, 14 X 20 MM, 1.60 MM HEIGHT, 0.65 MM PITCH, PLASTIC,
TC55VD1618FFI-150	TOSHIBA	获取价格	IC 1M X 18 ZBT SRAM, 3.8 ns, PQFP100, 14 X 20 MM, 1.60 MM HEIGHT, 0.65 MM PITCH, PLASTIC,
TC55VD818FF-150	TOSHIBA	获取价格	IC 512K X 18 STANDARD SRAM, 3.8 ns, PQFP100, 14 X 20 MM, 1.60 MM HEIGHT, 0.65 MM PITCH, PL
TC55VD836FF-133	TOSHIBA	获取价格	IC 256K X 36 STANDARD SRAM, 4.2 ns, PQFP100, 14 X 20 MM, 1.60 MM HEIGHT, 0.65 MM PITCH, PL
TC55VD836FF-143	TOSHIBA	获取价格	IC 256K X 36 STANDARD SRAM, 4 ns, PQFP100, 14 X 20 MM, 1.60 MM HEIGHT, 0.65 MM PITCH, PLAS

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