Datasheet > TC55VEM316AXBN

TC55VEM316AXBN

更新时间： 2024-09-18 22:16:11

品牌	Logo	应用领域
东芝 - TOSHIBA		栅
页数	文件大小	规格书
14页	202K
描述
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

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TC55VEM316AXBN 数据手册

TC55VEM316AXBN40,55

TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

524,288-WORD BY 16-BIT FULL CMOS STATIC RAM

DESCRIPTION

The TC55VEM316AXBN is a 8,388,608-bit static random access memory (SRAM) organized as 524,288 words by

16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to

3.6 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of

3 mA/MHz and a minimum cycle time of 40 ns. It is automatically placed in low-power mode at 0.7 µA standby

current (at V_DD= 3 V, Ta = 25°C, typical) when chip enable (CE1 ) is asserted high or (CE2) is asserted low. There

are three control inputs. CE1 and CE2 are used to select the device and for data retention control, and output

enable (OE ) provides fast memory access. Data byte control pin ( LB , UB ) provides lower and upper byte access.

This device is well suited to various microprocessor system applications where high speed, low power and battery

backup are required. And, with a guaranteed operating extreme temperature range of −40° to 85°C, the

TC55VEM316AXBN can be used in environments exhibiting extreme temperature conditions. The

TC55VEM316AXBN is available in a plastic 48-ball BGA.

FEATURES

•

Access Times:

•

Low-power dissipation

Operating: 9 mW/MHz (typical)

TC55VEM316AXBN

•

Single power supply voltage of 2.3 to 3.6 V

Power down features usingCE1 and CE2

Data retention supply voltage of 1.5 to 3.6 V

Direct TTL compatibility for all inputs and outputs

Wide operating temperature range of −40° to 85°C

Standby Current (maximum):

Access Time

40 ns

25 ns

55 ns

30 ns

CE1 Access Time

CE2 Access Time

OE Access Time

3.6 V

10 µA

3.0 V

5 µA

•

Package:

P-TFBGA48-0811-0.75BZ (Weight:

g typ)

PIN ASSIGNMENT (TOP VIEW)

PIN NAMES

48 PIN BGA

A0~A18

CE1 , CE2

R/W

Address Inputs

Chip Enable

CE2

Read/Write Control

Output Enable

Data Byte Control

I/O9

CE1 I/O1

I/O2 I/O3

LB , UB

C I/O10 I/O11 A5

I/O1~I/O16 Data Inputs/Outputs

I/O12 A17

I/O13 OP

I/O4

Power

GND

Ground

A16 I/O5

No Connection

Option

I/O15 I/O14 A14 A15 I/O6 I/O7

A12 A13 R/W I/O8

A9 A10 A11 NC

OP*

G I/O16 NC

A18 A8

*: OP pin must be open or connected to GND.

2002-07-23 1/14

12 3 4 5 6 7...14

中文翻译

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与TC55VEM316AXBN相关器件

型号	品牌	获取价格	描述	数据表
TC55VEM316AXBN40	TOSHIBA	获取价格	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55VEM316AXBN55	TOSHIBA	获取价格	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55VEM316AXGN40	TOSHIBA	获取价格	IC 512K X 16 STANDARD SRAM, 55 ns, PBGA48, 8 X 11 MM, 0.75 MM PITCH, LEAD FREE, PLASTIC, T
TC55VEM316AXGN55	TOSHIBA	获取价格	IC 512K X 16 STANDARD SRAM, 70 ns, PBGA48, 8 X 11 MM, 0.75 MM PITCH, LEAD FREE, PLASTIC, T
TC55VEM316BXGN40	TOSHIBA	获取价格	IC 512K X 16 STANDARD SRAM, 55 ns, PBGA48, 6 X 7 MM, 0.75 MM PITCH, LEAD FREE, PLASTIC, TF
TC55VEM316BXGN45	TOSHIBA	获取价格	IC 512K X 16 STANDARD SRAM, 55 ns, PBGA48, 6 X 7 MM, 0.75 MM PITCH, LEAD FREE, PLASTIC, TF
TC55VEM316BXGN55	TOSHIBA	获取价格	IC 512K X 16 STANDARD SRAM, 70 ns, PBGA48, 6 X 7 MM, 0.75 MM PITCH, LEAD FREE, PLASTIC, TF
TC55VEM416AXBN55	TOSHIBA	获取价格	1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM
TC55VEM416AXGN55	TOSHIBA	获取价格	IC 1M X 16 STANDARD SRAM, 70 ns, PBGA48, 8 X 11 MM, 0.75 MM PITCH, LEAD FREE, PLASTIC, TFB
TC55VEM416BXGN40	TOSHIBA	获取价格	IC,SRAM,1MX16,CMOS,BGA,48PIN,PLASTIC

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