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TC55VEM316AXBN40 PDF预览

TC55VEM316AXBN40

更新时间： 2024-11-07 22:12:11
品牌 Logo 应用领域
东芝 - TOSHIBA 栅
页数 文件大小 规格书
14页 202K
描述
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

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中文翻译

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TC55VEM316AXBN40 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：BGA包装说明：8 X 11 MM, 0.75 MM PITCH, PLASTIC, TFBGA-48
针数：48Reach Compliance Code：unknown
风险等级：5.92最长访问时间：55 ns
JESD-30 代码：R-PBGA-B48JESD-609代码：e0
长度：11 mm内存密度：8388608 bit
内存集成电路类型：STANDARD SRAM内存宽度：16
功能数量：1端子数量：48
字数：524288 words字数代码：512000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：512KX16
封装主体材料：PLASTIC/EPOXY封装代码：TFBGA
封装形状：RECTANGULAR封装形式：GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行：PARALLEL峰值回流温度（摄氏度）：240
认证状态：Not Qualified座面最大高度：1.2 mm
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.3 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：TIN LEAD端子形式：BALL
端子节距：0.75 mm端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：8 mm
Base Number Matches：1

TC55VEM316AXBN40 数据手册

 浏览型号TC55VEM316AXBN40的Datasheet PDF文件第2页浏览型号TC55VEM316AXBN40的Datasheet PDF文件第3页浏览型号TC55VEM316AXBN40的Datasheet PDF文件第4页浏览型号TC55VEM316AXBN40的Datasheet PDF文件第5页浏览型号TC55VEM316AXBN40的Datasheet PDF文件第6页浏览型号TC55VEM316AXBN40的Datasheet PDF文件第7页 
TC55VEM316AXBN40,55  
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS  
524,288-WORD BY 16-BIT FULL CMOS STATIC RAM  
DESCRIPTION  
The TC55VEM316AXBN is a 8,388,608-bit static random access memory (SRAM) organized as 524,288 words by  
16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to  
3.6 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of  
3 mA/MHz and a minimum cycle time of 40 ns. It is automatically placed in low-power mode at 0.7 µA standby  
current (at VDD = 3 V, Ta = 25°C, typical) when chip enable (CE1 ) is asserted high or (CE2) is asserted low. There  
are three control inputs. CE1 and CE2 are used to select the device and for data retention control, and output  
enable (OE ) provides fast memory access. Data byte control pin ( LB , UB ) provides lower and upper byte access.  
This device is well suited to various microprocessor system applications where high speed, low power and battery  
backup are required. And, with a guaranteed operating extreme temperature range of −40° to 85°C, the  
TC55VEM316AXBN can be used in environments exhibiting extreme temperature conditions. The  
TC55VEM316AXBN is available in a plastic 48-ball BGA.  
FEATURES  
•
Access Times:  
•
Low-power dissipation  
Operating: 9 mW/MHz (typical)  
TC55VEM316AXBN  
•
•
•
•
•
•
Single power supply voltage of 2.3 to 3.6 V  
Power down features usingCE1 and CE2  
Data retention supply voltage of 1.5 to 3.6 V  
Direct TTL compatibility for all inputs and outputs  
Wide operating temperature range of −40° to 85°C  
Standby Current (maximum):  
40  
55  
Access Time  
40 ns  
40 ns  
40 ns  
25 ns  
55 ns  
55 ns  
55 ns  
30 ns  
CE1 Access Time  
CE2 Access Time  
OE Access Time  
3.6 V  
10 µA  
3.0 V  
5 µA  
•
Package:  
P-TFBGA48-0811-0.75BZ (Weight:  
g typ)  
PIN ASSIGNMENT (TOP VIEW)  
PIN NAMES  
48 PIN BGA  
A0~A18  
CE1 , CE2  
R/W  
Address Inputs  
Chip Enable  
1
2
3
4
5
6
A
B
LB  
OE  
UB  
A0  
A3  
A1  
A4  
A6  
A7  
A2  
CE2  
Read/Write Control  
Output Enable  
Data Byte Control  
I/O9  
CE1 I/O1  
I/O2 I/O3  
OE  
LB , UB  
C I/O10 I/O11 A5  
I/O1~I/O16 Data Inputs/Outputs  
D
E
F
V
I/O12 A17  
I/O13 OP  
I/O4  
V
DD  
SS  
DD  
V
Power  
DD  
GND  
NC  
Ground  
V
A16 I/O5  
V
SS  
No Connection  
Option  
I/O15 I/O14 A14 A15 I/O6 I/O7  
A12 A13 R/W I/O8  
A9 A10 A11 NC  
OP*  
G I/O16 NC  
A18 A8  
*: OP pin must be open or connected to GND.  
H
2002-07-23 1/14  
1234567...14

中文翻译

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与TC55VEM316AXBN40相关器件

型号 品牌 获取价格 描述 数据表
TC55VEM316AXBN55 TOSHIBA

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 		TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55VEM316AXGN40 TOSHIBA

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 		IC 512K X 16 STANDARD SRAM, 55 ns, PBGA48, 8 X 11 MM, 0.75 MM PITCH, LEAD FREE, PLASTIC, T
TC55VEM316AXGN55 TOSHIBA

获取价格

 		IC 512K X 16 STANDARD SRAM, 70 ns, PBGA48, 8 X 11 MM, 0.75 MM PITCH, LEAD FREE, PLASTIC, T
TC55VEM316BXGN40 TOSHIBA

获取价格

 		IC 512K X 16 STANDARD SRAM, 55 ns, PBGA48, 6 X 7 MM, 0.75 MM PITCH, LEAD FREE, PLASTIC, TF
TC55VEM316BXGN45 TOSHIBA

获取价格

 		IC 512K X 16 STANDARD SRAM, 55 ns, PBGA48, 6 X 7 MM, 0.75 MM PITCH, LEAD FREE, PLASTIC, TF
TC55VEM316BXGN55 TOSHIBA

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 		IC 512K X 16 STANDARD SRAM, 70 ns, PBGA48, 6 X 7 MM, 0.75 MM PITCH, LEAD FREE, PLASTIC, TF
TC55VEM416AXBN55 TOSHIBA

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 		1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM
TC55VEM416AXGN55 TOSHIBA

获取价格

 		IC 1M X 16 STANDARD SRAM, 70 ns, PBGA48, 8 X 11 MM, 0.75 MM PITCH, LEAD FREE, PLASTIC, TFB
TC55VEM416BXGN40 TOSHIBA

获取价格

 		IC,SRAM,1MX16,CMOS,BGA,48PIN,PLASTIC
TC55VEM416BXGN55 TOSHIBA

获取价格

 		1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM

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