TC55VEM208ASTN40

更新时间： 2024-11-07 22:16:11

品牌	Logo	应用领域
东芝 - TOSHIBA		栅
页数	文件大小	规格书
11页	167K
描述
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

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TC55VEM208ASTN40 数据手册

TC55VEM208ASTN40,55

TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

524,288-WORD BY 8-BIT STATIC RAM

DESCRIPTION

The TC55VEM208ASTN is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by

8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to

3.6 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of

3 mA/MHz (typ) and a minimum cycle time of 40 ns. It is automatically placed in low-power mode at 0.7 µA standby

current (typ) when chip enable (CE ) is asserted high. There are two control inputs. CE is used to select the device

and for data retention control, and output enable (OE ) provides fast memory access. This device is well suited to

various microprocessor system applications where high speed, low power and battery backup are required. The

TC55VEM208ASTN is available in a plastic 32-pin thin-small-outline package (TSOP).

FEATURES

•

Access Times:

•

Low-power dissipation

Operating: 9 mW/MHz (typical)

TC55VEM208ASTN

•

Single power supply voltage of 2.3 to 3.6 V

Power down features usingCE

Data retention supply voltage of 1.5 to 3.6 V

Direct TTL compatibility for all inputs and outputs

Wide operating temperature range of −40° to 85°C

Standby Current (maximum):

Access Time

40 ns

25 ns

55 ns

30 ns

CE Access Time

OE Access Time

3.6 V

10 µA

•

Package:

3.0 V

5 µA

TSOPⅠ32-P-0.50

(Weight:0.22 g typ)

PIN ASSIGNMENT (TOP VIEW)

32 PIN TSOP

PIN NAMES

A0~A18

R/W

Address Inputs

Read/Write Control

Output Enable

Chip Enable

I/O1~I/O8

Data Inputs/Outputs

Power

(Normal)

GND

Ground

Pin No.

Pin Name

Pin No.

A18 A16 A14 A12

25 26 27 28

A11

A13 R/W A17 A15

Pin Name

I/O1 I/O2 I/O3 GND I/O4 I/O5 I/O6 I/O7 I/O8 CE

A10

2002-08-07 1/11

12 3 4 5 6 7...11

中文翻译

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与TC55VEM208ASTN40相关器件

型号	品牌	获取价格	描述	数据表
TC55VEM208ASTN55	TOSHIBA	获取价格	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55VEM216ABXN55	TOSHIBA	获取价格	IC 256K X 16 STANDARD SRAM, 70 ns, PBGA48, 6 X 8 MM, 0.75 MM PITCH, PLASTIC, TFBGA-48, Sta
TC55VEM216AGXN40	TOSHIBA	获取价格	IC 256K X 16 STANDARD SRAM, 55 ns, PBGA48, 6 X 8 MM, 0.75 MM PITCH, LEAD FREE, PLASTIC, TF
TC55VEM216AGXN55	TOSHIBA	获取价格	IC 256K X 16 STANDARD SRAM, 70 ns, PBGA48, 6 X 8 MM, 0.75 MM PITCH, LEAD FREE, PLASTIC, TF
TC55VEM216AXBN40	TOSHIBA	获取价格	IC 256K X 16 STANDARD SRAM, 40 ns, PBGA48, 6 X 7 MM, 0.75 MM PITCH, PLASTIC, TFBGA-48, Sta
TC55VEM216AXBN55	TOSHIBA	获取价格	IC 256K X 16 STANDARD SRAM, 55 ns, PBGA48, 6 X 7 MM, 0.75 MM PITCH, PLASTIC, TFBGA-48, Sta
TC55VEM316AXBN	TOSHIBA	获取价格	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55VEM316AXBN40	TOSHIBA	获取价格	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55VEM316AXBN55	TOSHIBA	获取价格	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55VEM316AXGN40	TOSHIBA	获取价格	IC 512K X 16 STANDARD SRAM, 55 ns, PBGA48, 8 X 11 MM, 0.75 MM PITCH, LEAD FREE, PLASTIC, T

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