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Datasheet > TC55VCM316BTGN40
TC55VCM316BTGN40 PDF预览

TC55VCM316BTGN40

更新时间： 2024-11-10 20:10:43
品牌 Logo 应用领域
东芝 - TOSHIBA 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
18页 312K
描述
IC 512K X 16 STANDARD SRAM, 55 ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48, Static RAM

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中文翻译

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TC55VCM316BTGN40 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：TSOP1包装说明：TSOP1, TSSOP48,.8,20
针数：48Reach Compliance Code：unknown
ECCN代码：3A991.B.2.AHTS代码：8542.32.00.41
风险等级：5.78最长访问时间：55 ns
I/O 类型：COMMONJESD-30 代码：R-PDSO-G48
JESD-609代码：e2长度：18.4 mm
内存密度：8388608 bit内存集成电路类型：STANDARD SRAM
内存宽度：16功能数量：1
端子数量：48字数：524288 words
字数代码：512000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：512KX16输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：TSOP1
封装等效代码：TSSOP48,.8,20封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE并行/串行：PARALLEL
电源：2.5/3.3 V认证状态：Not Qualified
座面最大高度：1.2 mm最小待机电流：1.5 V
子类别：SRAMs最大压摆率：0.02 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.3 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：TIN COPPER/TIN SILVER端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
宽度：12 mmBase Number Matches：1

TC55VCM316BTGN40 数据手册

 浏览型号TC55VCM316BTGN40的Datasheet PDF文件第2页浏览型号TC55VCM316BTGN40的Datasheet PDF文件第3页浏览型号TC55VCM316BTGN40的Datasheet PDF文件第4页浏览型号TC55VCM316BTGN40的Datasheet PDF文件第5页浏览型号TC55VCM316BTGN40的Datasheet PDF文件第6页浏览型号TC55VCM316BTGN40的Datasheet PDF文件第7页 
TC55VCM316BTGN, TC55VCM316BSGN, TC55VEM316BXGN40,55  
TC55YCM316BTGN, TC55YCM316BSGN, TC55YEM316BXGN55,70  
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS  
Lead-Free  
524,288-WORD BY 16-BIT FULL CMOS STATIC RAM  
DESCRIPTION  
The TC55VCM316B, TC55VEM316B, TC55YCM316B and TC55YEM316B is a 8,388,608-bit static random  
access memory (SRAM) organized as 524,288 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate  
process technology, this device operates from a single 2.3 to 3.6 V/1.65 to 2.2 V power supply. Advanced circuit  
technology provides both high speed and low power at an operating current of 2 mA/MHz and a minimum cycle  
time of 40 ns. It is automatically placed in low-power mode at 0.6 µA standby current (at VDD = 3 V, Ta = 25°C,  
typical) when chip enable (CE1 ) is asserted high or (CE2) is asserted low. There are three control inputs. CE1  
and CE2 are used to select the device and for data retention control, and output enable (OE ) provides fast memory  
access. Data byte control pin ( LB , UB ) provides lower and upper byte access. This device is well suited to various  
microprocessor system applications where high speed, low power and battery backup are required. And, with a  
guaranteed operating extreme temperature range of −40° to 85°C, the TC55VCM316B, TC55VEM316B,  
TC55YCM316B and TC55YEM316B can be used in environments exhibiting extreme temperature conditions. The  
TC55VCM316BTGN/BSGN, TC55YCM316BTGN/BSGN is available in a plastic 48-pin thin-small-outline package  
(TSOP). The TC55VEM316BXGN, TC55YEM316BXGN is available in a plastic 48-ball BGA.  
FEATURES  
•
Low-power dissipation  
Operating: 6 mW/MHz (typical)  
Power down features usingCE1 and CE2  
Wide operating temperature range of −40° to 85°C  
Lead-Free  
•
•
•
Access time  
(MAX)  
Supply Current  
Operating  
Supply  
Voltage  
At Data  
Retention  
Part Number  
Package  
Supply  
Supply  
Voltage  
At  
At  
Voltage  
Operating Standby  
2.7~3.6 V  
2.3~3.6 V  
(MAX)  
20 mA  
(MAX)  
48-pin Plastic TSOP(I)  
(12×20mm) (0.5mm pin pitch)  
(Normal bent)  
TC55VCM316BTGN40  
TC55VCM316BTGN55  
TC55VCM316BSGN40  
TC55VCM316BSGN55  
TC55VEM316BXGN40  
TC55VEM316BXGN55  
40 ns  
55 ns  
40 ns  
55 ns  
40 ns  
55 ns  
55 ns  
70 ns  
55 ns  
70 ns  
55 ns  
70 ns  
48-pin Plastic TSOP(I)  
(12×14mm) (0.5mm pin pitch)  
(Normal bent)  
2.3~3.6 V  
10 µA  
1.5~3.6 V  
48-ball BGA  
(6×7mm) (0.75mm ball pitch)  
Access time  
(MAX)  
Supply Current  
Operating  
Supply  
Voltage  
At Data  
Retention  
Part Number  
Package  
Supply  
Supply  
Voltage  
At  
At  
Voltage  
Operating Standby  
1.8~2.2 V  
1.65~2.2 V  
(MAX)  
12 mA  
(MAX)  
48-pin Plastic TSOP(I)  
(12×20mm) (0.5mm pin pitch)  
(Normal bent)  
TC55YCM316BTGN55  
TC55YCM316BTGN70  
TC55YCM316BSGN55  
TC55YCM316BSGN70  
TC55YEM316BXGN55  
TC55YEM316BXGN70  
55 ns  
70 ns  
85 ns  
70 ns  
85 ns  
70 ns  
85 ns  
70 ns  
48-pin Plastic TSOP(I)  
(12×14mm) (0.5mm pin pitch)  
(Normal bent)  
55 ns  
1.65~2.2 V  
10 µA  
1.0~2.2 V  
70 ns  
55 ns  
48-ball BGA  
(6×7mm) (0.75mm ball pitch)  
70 ns  
2005-01-31 1/18  
1234567...18

中文翻译

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与TC55VCM316BTGN40相关器件

型号 品牌 获取价格 描述 数据表
TC55VCM316BTGN45 TOSHIBA

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 		IC 512K X 16 STANDARD SRAM, 55 ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC,
TC55VCM316BTGN55 TOSHIBA

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 		IC 512K X 16 STANDARD SRAM, 70 ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC,
TC55VCM416BSGN TOSHIBA

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 		1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM
TC55VCM416BSGN55 TOSHIBA

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 		IC 1M X 16 STANDARD SRAM, 70 ns, PDSO48, 12 X 14 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TS
TC55VCM416BTGN TOSHIBA

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 		1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM
TC55VCM416BTGN55 TOSHIBA

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 		1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM
TC55VCM416BTGN55LB TOSHIBA

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 		暂无描述
TC55VD1618FF-133 TOSHIBA

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TC55VD1618FF-150 TOSHIBA

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 		TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC55VD1618FF-167 TOSHIBA

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 		TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

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