Datasheet > STW56N65M2

STW56N65M2

更新时间： 2023-12-20 18:44:20

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意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	724K
描述
N沟道650 V、0.049 Ohm典型值、49 A MDmesh M2功率MOSFET，TO-247封装

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STW56N65M2 数据手册

STW56N65M2

Electrical characteristics

Min. Typ. Max. Unit

Table 7. Switching times

Test conditions

Symbol

t_d(on)

t_r

t_d(off)

t_f

Parameter

Turn-on delay time

Rise time

27.5

146

V_DD= 325 V, I_D= 24.5 A,

R_G= 4.7 ꢀ, V_GS= 10 V

(see Figure 16 and

Figure 19)

Turn-off delay time

Fall time

Table 8. Source drain diode

Test conditions

Symbol

Parameter

Min. Typ. Max. Unit

I_SD

Source-drain current

196

1.6

(1)

I_SDM

Source-drain current (pulsed)

Forward on voltage

(2)

V_SD

I_SD= 49 A, V_GS= 0

_SD= 49 A,

t_rr

Q_rr

I_RRM

t_rr

Reverse recovery time

Reverse recovery charge

Reverse recovery current

Reverse recovery time

Reverse recovery charge

554

13.5

49.5

688

µC

di/dt = 100 A/µs

V_DD= 60 V (see Figure 16)

I_SD= 49 A,

µC

di/dt = 100 A/µs

Q_rr

_DD= 60 V, T_j= 150 °C

I_RRM

Reverse recovery current

(see Figure 19)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

DocID027285 Rev 1

5/12

1 2 3 456 7 8...12

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