Datasheet > STW56N65M2

STW56N65M2

更新时间： 2023-12-20 18:44:20

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意法半导体 - STMICROELECTRONICS		/
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12页	724K
描述
N沟道650 V、0.049 Ohm典型值、49 A MDmesh M2功率MOSFET，TO-247封装

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STW56N65M2 数据手册

STW56N65M2

Electrical ratings

Table 2. Absolute maximum ratings

Parameter

Symbol

Value

Unit

V_GS

I_D

Gate- source voltage

±25

Drain current (continuous) at T_C= 25 °C

Drain current (continuous) at T_C= 100 °C

Drain current (pulsed)

I_D

(1)

I_DM

196

P_TOT

Total dissipation at T_C= 25 °C

358

dv/dt ⁽²⁾Peak diode recovery voltage slope

dv/dt⁽³⁾MOSFET dv/dt ruggedness

V/ns

°C

T_stg

T_j

Storage temperature

- 55 to 150

150

Max. operating junction temperature

1. Pulse width limited by safe operating area

≤ 49 A, di/dt = 400 A/µs, peak V < V

, V = 400 V

(BR)DSS DD

≤ 520 V

Table 3. Thermal data

Parameter

Symbol

Value

Unit

R_thj-ambThermal resistance junction-ambient max

R_thj-caseThermal resistance junction-case max

°C/W

0.35

Table 4. Avalanche characteristics

Parameter

Max current during repetitive or single pulse

Symbol

Value

Unit

I_AR

3.5

avalanche (pulse width limited by T_JMAX

)

Single pulse avalanche energy

E_AS

1300

(starting T_j= 25 °C, I_D= I_AR, V_DD= 50 V)

DocID027285 Rev 1

3/12

1 234 5 6 7...12

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